We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
IPB50CN10NGATMA1 DISTI # IPB50CN10NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 20A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
IPB50CN10NGATMA1 DISTI # IPB50CN10NGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 20A 3-Pin TO-263 T/R - Bulk (Alt: IPB50CN10NGATMA1) Min Qty: 642 Container: Bulk | Americas - 0 |
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IPB50CN10NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 7000 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: IPB50CN10N OMO.#: OMO-IPB50CN10N-1190 |
Neu und Original | |
Mfr.#: IPB50CN10NG OMO.#: OMO-IPB50CN10NG-1190 |
Neu und Original | |
Mfr.#: IPB50CN10NGATMA1 |
MOSFET N-CH 100V 20A TO263-3 | |
Mfr.#: IPB50CN10N G OMO.#: OMO-IPB50CN10N-G-126 |
IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2 |