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IPB50R250CPATMA1

IPB50R250CPATMA1
Mfr. #:
IPB50R250CPATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LOW POWER_LEGACY
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB50R250CPATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
IPB50R250CPATMA1 SP000236093
Gewichtseinheit:
0.139332 oz
Tags
IPB50R25, IPB50R2, IPB50R, IPB50, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:550V; Current, Id Cont:13A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
Teil # Mfg. Beschreibung Aktie Preis
IPB50R250CPATMA1
DISTI # V72:2272_06378629		Infineon Technologies AGTrans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1491
  • 75000:$1.1540
  • 30000:$1.2511
  • 15000:$1.3902
  • 6000:$1.3989
  • 3000:$1.4120
  • 1000:$1.4190
  • 500:$1.4510
  • 250:$1.6197
  • 100:$1.7965
  • 50:$1.9153
  • 25:$2.2269
  • 10:$2.3177
  • 1:$2.8802
IPB50R250CPATMA1
DISTI # IPB50R250CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 550V 13A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB50R250CPATMA1
    DISTI # 26195036    		Infineon Technologies AGTrans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1491
    • 6:$2.8802
    IPB50R250CPATMA1
    DISTI # IPB50R250CPATMA1    		Infineon Technologies AGTrans MOSFET N-CH 550V 13A 3-Pin TO-263 T/R - Bulk (Alt: IPB50R250CPATMA1)
    Min Qty: 317
    Container: Bulk    		Americas - 0
    • 3170:$1.0029
    • 1585:$1.0209
    • 951:$1.0569
    • 634:$1.0969
    • 317:$1.1379
    IPB50R250CP
    DISTI # 726-IPB50R250CP    		Infineon Technologies AGMOSFET N-Ch 550V 13A D2PAK-2 CoolMOS CP
    RoHS: Compliant    		784
    • 1:$2.5300
    • 10:$2.1500
    • 100:$1.7200
    • 500:$1.5100
    • 1000:$1.2500
    IPB50R250CPATMA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      IPB50R250CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		2000
      • 1000:$1.0400
      • 500:$1.0900
      • 100:$1.1400
      • 25:$1.1900
      • 1:$1.2800
      Bild Teil # Beschreibung
      IPB50R250CPATMA1

      Mfr.#: IPB50R250CPATMA1

      OMO.#: OMO-IPB50R250CPATMA1

      		 MOSFET LOW POWER_LEGACY
      IPB50R250CP

      Mfr.#: IPB50R250CP

      OMO.#: OMO-IPB50R250CP-1190

      		 - Bulk (Alt: IPB50R250CP)
      IPB50R250CP 5R250P

      Mfr.#: IPB50R250CP 5R250P

      OMO.#: OMO-IPB50R250CP-5R250P-1190

      		 Neu und Original
      IPB50R250CPATMA1

      Mfr.#: IPB50R250CPATMA1

      OMO.#: OMO-IPB50R250CPATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 550V 13A TO-263
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von IPB50R250CPATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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