IPB50R199CP

IPB50R199CP
Mfr. #:
IPB50R199CP
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB50R199CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB50R199CP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
CoolMOS CP
Verpackung
Spule
Teil-Aliasnamen
IPB50R199CPATMA1 IPB50R199CPXT SP000236092
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
139 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
14 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
17 A
Vds-Drain-Source-Breakdown-Voltage
550 V
Rds-On-Drain-Source-Widerstand
199 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
80 ns
Typische-Einschaltverzögerungszeit
35 ns
Kanal-Modus
Erweiterung
Tags
IPB50R19, IPB50R1, IPB50R, IPB50, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB50R199CPATMA1
DISTI # 30205356
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 6000:$1.3186
  • 2000:$1.3344
  • 1000:$1.4304
IPB50R199CPATMA1
DISTI # IPB50R199CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 550V 17A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.7015
IPB50R199CPATMA1
DISTI # C1S322000471076
Infineon Technologies AGMOSFETs
RoHS: Compliant
1000
  • 1000:$1.6800
IPB50R199CP
DISTI # IPB50R199CP
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: IPB50R199CP)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 5000
  • 1000:$1.3950
  • 2000:$1.3377
  • 3000:$1.3196
  • 5000:$1.2682
  • 10000:$1.2519
  • 25000:$1.2206
  • 50000:$1.1908
IPB50R199CPATMA1
DISTI # IPB50R199CPATMA1
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB50R199CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 2000
  • 1000:$1.4900
  • 2000:$1.3900
  • 4000:$1.3900
  • 6000:$1.2900
  • 10000:$1.2900
IPB50R199CPATMA1
DISTI # SP000236092
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: SP000236092)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.9900
  • 2000:€1.4900
  • 4000:€1.3900
  • 6000:€1.3900
  • 10000:€1.2900
IPB50R199CP
DISTI # 726-IPB50R199CP
Infineon Technologies AGMOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
RoHS: Compliant
1258
  • 1:$2.9300
  • 10:$2.4900
  • 100:$2.1600
  • 250:$2.0500
  • 500:$1.8400
  • 1000:$1.5500
IPB50R199CPInfineon Technologies AGPower Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB
RoHS: Compliant
13000
  • 1000:$1.3300
  • 500:$1.4000
  • 100:$1.4600
  • 25:$1.5200
  • 1:$1.6400
IPB50R199CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB
RoHS: Compliant
130
  • 1000:$1.4000
  • 500:$1.4700
  • 100:$1.5300
  • 25:$1.5900
  • 1:$1.7200
IPB50R199CPATMA1
DISTI # 8275280P
Infineon Technologies AGMOSFET N-CH 17A 550V COOLMOS TO263, RL1255
  • 100:£1.5480
  • 250:£1.4700
  • 500:£1.3240
  • 1000:£1.1220
IPB50R199CPATMA1
DISTI # XSFT00000025424
Infineon Technologies AG 
RoHS: Compliant
4000
  • 1000:$1.9600
Bild Teil # Beschreibung
IPB50R199CP

Mfr.#: IPB50R199CP

OMO.#: OMO-IPB50R199CP

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OMO.#: OMO-IPB50CN10NGATMA1-INFINEON-TECHNOLOGIES

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Mfr.#: IPB50R199CP 5R199P

OMO.#: OMO-IPB50R199CP-5R199P-1190

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OMO.#: OMO-IPB50R299CP-PB-FREE-1190

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IPB50R199CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,80 $
1,80 $
10
1,71 $
17,10 $
100
1,62 $
162,03 $
500
1,53 $
765,15 $
1000
1,44 $
1 440,20 $
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