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IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
Hersteller:
Infineon Technologies
Beschreibung:
Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8313PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
-
Verpackung
Alternative Verpackung für Tuben
Gewichtseinheit
0.019048 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 175°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
2W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
760pF @ 15V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
9.7A
Rds-On-Max-Id-Vgs
15.5 mOhm @ 9.7A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Lade-Qg-Vgs
90nC @ 4.5V
Pd-Verlustleistung
2 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
9.7 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
21.6 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
6 nC
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC Tube
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Teil # Mfg. Beschreibung Aktie Preis
IRF8313PBF
DISTI # V99:2348_13891188		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant		182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279    		Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant    		182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491      		Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF      		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant      		0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT        		Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant        		2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723        		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant        		123
        • 50:$0.2240
        • 10:$0.3250
        Bild Teil # Beschreibung
        IRF8327STRPBF

        Mfr.#: IRF8327STRPBF

        OMO.#: OMO-IRF8327STRPBF

        		 MOSFET 30V N-Channel HEXFET Power MOSFET
        IRF8308MTRPBF

        Mfr.#: IRF8308MTRPBF

        OMO.#: OMO-IRF8308MTRPBF

        		 MOSFET 30V N-Channel HEXFET Power MOSFET
        IRF8306MTR1PBF

        Mfr.#: IRF8306MTR1PBF

        OMO.#: OMO-IRF8306MTR1PBF

        		 MOSFET MOSFT 30V Gen 3.6mOhm mx 25nC Og
        IRF8304MTR1PBF

        Mfr.#: IRF8304MTR1PBF

        OMO.#: OMO-IRF8304MTR1PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 28A MX
        IRF830/IRF830PBF

        Mfr.#: IRF830/IRF830PBF

        OMO.#: OMO-IRF830-IRF830PBF-1190

        		 Neu und Original
        IRF830AL

        Mfr.#: IRF830AL

        OMO.#: OMO-IRF830AL-VISHAY

        		 MOSFET N-CH 500V 5A TO262-3
        IRF830APBF,IRF830A,IRF83

        Mfr.#: IRF830APBF,IRF830A,IRF83

        OMO.#: OMO-IRF830APBF-IRF830A-IRF83-1190

        		 Neu und Original
        IRF830P

        Mfr.#: IRF830P

        OMO.#: OMO-IRF830P-1190

        		 Neu und Original
        IRF831

        Mfr.#: IRF831

        OMO.#: OMO-IRF831-1190

        		 Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IRF831P

        Mfr.#: IRF831P

        OMO.#: OMO-IRF831P-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2000
        Menge eingeben:
        Der aktuelle Preis von IRF8313PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,34 $
        0,34 $
        10
        0,32 $
        3,19 $
        100
        0,30 $
        30,24 $
        500
        0,29 $
        142,80 $
        1000
        0,27 $
        268,80 $
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