 |  | | |
| PartNumber | IRF8313PBF | IRF831 | IRF8313 |
| Description | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Infineon | SAMSUNG | IR |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 9.7 A | - | - |
| Rds On Drain Source Resistance | 21.6 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6 nC | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001570694 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF8313TRPBF | MOSFET MOSFT DUAL NCh 30V 9.7A | |
| IRF8313PBF | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | ||
| IRF8313TRPBF-CUT TAPE | Neu und Original | ||
| IRF831 | Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF8313 | Neu und Original | ||
| IRF8313TR | Neu und Original | ||
| IRF8313TRPBFINFINEON | Neu und Original | ||
| IRF831FI | Neu und Original | ||
| IRF831P | Neu und Original | ||
| IRF831PBF | Neu und Original | ||
Infineon Technologies |
IRF8313PBF | Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube | |
| IRF8313TRPBF | MOSFET 2N-CH 30V 9.7A 8-SOIC |