IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8313PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8313PBF DatasheetIRF8313PBF Datasheet (P4-P6)IRF8313PBF Datasheet (P7-P9)IRF8313PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
9.7 A
Rds On - Drain-Source-Widerstand:
21.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
6 nC
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
2 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
95
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001570694
Gewichtseinheit:
0.019048 oz
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Teil # Mfg. Beschreibung Aktie Preis
IRF8313PBF
DISTI # V99:2348_13891188
Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant
182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279
    Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223
    Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant
    182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube
    Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491
      Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF
      Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant
      0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant
        1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant
        5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT
        Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant
        2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723
        Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant
        123
        • 50:$0.2240
        • 10:$0.3250
        Bild Teil # Beschreibung
        IRF8327STRPBF

        Mfr.#: IRF8327STRPBF

        OMO.#: OMO-IRF8327STRPBF

        MOSFET 30V N-Channel HEXFET Power MOSFET
        IRF830BPBF

        Mfr.#: IRF830BPBF

        OMO.#: OMO-IRF830BPBF

        MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
        IRF830STRL

        Mfr.#: IRF830STRL

        OMO.#: OMO-IRF830STRL

        MOSFET RECOMMENDED ALT 844-IRF830STRLPBF
        IRF830AL

        Mfr.#: IRF830AL

        OMO.#: OMO-IRF830AL

        MOSFET RECOMMENDED ALT 844-IRF830ALPBF
        IRF8304MTR1PBF

        Mfr.#: IRF8304MTR1PBF

        OMO.#: OMO-IRF8304MTR1PBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 28A MX
        IRF830/ SIHF830

        Mfr.#: IRF830/ SIHF830

        OMO.#: OMO-IRF830-SIHF830-1190

        Neu und Original
        IRF8308MTRPBF.

        Mfr.#: IRF8308MTRPBF.

        OMO.#: OMO-IRF8308MTRPBF--1190

        Neu und Original
        IRF830B

        Mfr.#: IRF830B

        OMO.#: OMO-IRF830B-1190

        Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IRF8313TRPBF

        Mfr.#: IRF8313TRPBF

        OMO.#: OMO-IRF8313TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.7A 8-SOIC
        IRF833

        Mfr.#: IRF833

        OMO.#: OMO-IRF833-1190

        Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von IRF8313PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Beginnen mit
        Neueste Produkte
        Top