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FQPF19N10

FQPF19N10
Mfr. #:
FQPF19N10
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors MOSFET 100V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQPF19N10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FSC
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Teil-Aliasnamen
FQPF19N10_NL
Gewichtseinheit
0.080072 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
38 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
65 ns
Anstiegszeit
150 ns
Vgs-Gate-Source-Spannung
25 V
ID-Dauer-Drain-Strom
13.6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
100 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
20 ns
Typische-Einschaltverzögerungszeit
7.5 ns
Vorwärts-Transkonduktanz-Min
10 S
Kanal-Modus
Erweiterung
Tags
FQPF19N1, FQPF19, FQPF1, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail
***Semiconductor
N-Channel QFET® MOSFET 100V, 13.6A, 100mΩ
***i-Key
MOSFET N-CH 100V 13.6A TO-220F
***ser
MOSFETs 100V N-Channel QFET
***inecomponents.com
100V N-Channel QFET®
***ark
Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:100V; Operating Temperature Max:175�C; Product Range:QFET Series; Automotive Qualification Standard:-; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Teil # Mfg. Beschreibung Aktie Preis
FQPF19N10
DISTI # V99:2348_06298498		ON Semiconductor100V N-CHANNEL QFET1000
  • 25000:$0.4224
  • 10000:$0.4319
  • 2000:$0.4534
  • 1000:$0.5162
  • 500:$0.6585
  • 100:$0.7521
  • 10:$1.0895
  • 1:$1.2826
FQPF19N10
DISTI # V36:1790_06298498		ON Semiconductor100V N-CHANNEL QFET0
    FQPF19N10L
    DISTI # FQPF19N10L-ND    		ON SemiconductorMOSFET N-CH 100V 13.6A TO-220F
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Limited Supply - Call
      FQPF19N10
      DISTI # FQPF19N10-ND      		ON SemiconductorMOSFET N-CH 100V 13.6A TO-220F
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube      		Temporarily Out of Stock
      • 1000:$0.5919
      FQPF19N10
      DISTI # 31435398      		ON Semiconductor100V N-CHANNEL QFET1000
      • 25000:$0.4224
      • 10000:$0.4319
      • 2000:$0.4534
      • 1000:$0.5162
      • 500:$0.6585
      • 100:$0.7521
      • 15:$0.9905
      FQPF19N10
      DISTI # FQPF19N10      		ON SemiconductorTrans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF19N10)
      RoHS: Compliant
      Min Qty: 50
      Container: Tube      		Americas - 3268
      • 500:$0.3849
      • 250:$0.3939
      • 150:$0.3989
      • 100:$0.4049
      • 50:$0.4069
      FQPF19N10
      DISTI # FQPF19N10      		ON SemiconductorTrans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: FQPF19N10)
      RoHS: Compliant
      Min Qty: 610
      Container: Bulk      		Americas - 0
      • 6100:$0.5059
      • 3050:$0.5179
      • 1830:$0.5249
      • 1220:$0.5319
      • 610:$0.5349
      FQPF19N10
      DISTI # FQPF19N10      		ON SemiconductorTrans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF19N10)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
      • 1000:€0.4219
      • 500:€0.4319
      • 100:€0.4459
      • 50:€0.4559
      • 25:€0.5409
      • 10:€0.6519
      • 1:€0.8379
      FQPF19N10.
      DISTI # 60AC9682      		ON SemiconductorContinuous Drain Current Id:13.6A,Drain Source Voltage Vds:100V,Operating Temperature Max:175°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
      • 500:$0.3940
      • 250:$0.4040
      • 102:$0.4100
      • 52:$0.4160
      • 1:$0.4180
      FQPF19N10
      DISTI # 512-FQPF19N10      		ON SemiconductorMOSFET 100V N-Channel QFET
      RoHS: Compliant      		2437
      • 1:$1.1800
      • 10:$1.0100
      • 100:$0.7720
      • 500:$0.6820
      • 1000:$0.5390
      FQPF19N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		1642
      • 1000:$0.5400
      • 500:$0.5700
      • 100:$0.5900
      • 25:$0.6200
      • 1:$0.6600
      FQPF19N10LFairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		1448
      • 1000:$0.5300
      • 500:$0.5500
      • 100:$0.5800
      • 25:$0.6000
      • 1:$0.6500
      FQPF19N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		Europe - 600
        Bild Teil # Beschreibung
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        OMO.#: OMO-FQPF4N20-ON-SEMICONDUCTOR

        		 MOSFET N-CH 200V 2.8A TO-220F
        FQPF6N60C,6N60C,

        Mfr.#: FQPF6N60C,6N60C,

        OMO.#: OMO-FQPF6N60C-6N60C--1190

        		 Neu und Original
        FQPF6N80C

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        OMO.#: OMO-FQPF6N80C-ON-SEMICONDUCTOR

        		 MOSFET N-CH 800V 5.5A TO-220F
        FQPF7N60C

        Mfr.#: FQPF7N60C

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        		 Neu und Original
        FQPF9N50C,FQP9N50C,FQP9N

        Mfr.#: FQPF9N50C,FQP9N50C,FQP9N

        OMO.#: OMO-FQPF9N50C-FQP9N50C-FQP9N-1190

        		 Neu und Original
        FQPF9N50C/13N50/18N50

        Mfr.#: FQPF9N50C/13N50/18N50

        OMO.#: OMO-FQPF9N50C-13N50-18N50-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von FQPF19N10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,58 $
        0,58 $
        10
        0,55 $
        5,48 $
        100
        0,52 $
        51,96 $
        500
        0,49 $
        245,35 $
        1000
        0,46 $
        461,90 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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