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2SC5707-E

2SC5707-E
Mfr. #:
2SC5707-E
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT BIP NPN 8A 50V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SC5707-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
50 V
Kollektor- Basisspannung VCBO:
100 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
160 mV, 110 mV
Maximaler DC-Kollektorstrom:
11 A
Bandbreitenprodukt fT gewinnen:
330 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2SC5707
Verpackung:
Schüttgut
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
8 A
DC-Kollektor/Basisverstärkung hfe Min:
200
Pd - Verlustleistung:
15 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.139332 oz
Tags
2SC5707, 2SC570, 2SC57, 2SC5, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Bipolar Transistor, 50V, 8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
*** Stop Electro
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251
***ical
Trans GP BJT NPN 50V 8A 1000mW 3-Pin(3+Tab) IPAK Bag
***ure Electronics
Bipolar Transistors - BJT BIP NPN 8A 50V
***nell
TRANSISTOR, NPN, 50V, 8A, TO-251-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 330MHz; Power Dissipation Pd: 15W; DC Collector Current: 8A; DC Current Gain hFE: 200hFE; Transist
***ark
TRANS, NPN, 50V, 8A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:8A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:330MHz RoHS Compliant: Yes
***emi
Bipolar Transistor, 50V, 3A, Low VCE(sat) NPN Single TP/TP-FA hFE = 140-280
***(Formerly Allied Electronics)
ON Semi 2SD1802S-TL-E NPN Bipolar Transistor; 3 A; 50 V; 3-Pin TP-FA
***enic
1Ã×A 50V 1W 3A 150MHz 190mV@2A100mA NPN +150¡Í@(Tj) TO-252-3 Bipolar Transistors - BJT ROHS
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***ical
Trans GP BJT NPN 50V 3A 1000mW 3-Pin(2+Tab) DPAK T/R
***ark
TRANSISTOR, NPN, 50V, 3A, TO-251; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:280; Transistor Case ;RoHS Compliant: Yes
***emi
Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
***r Electronics
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251
***ical
Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) IPAK Bag
***el Electronic
Bipolar Transistors - BJT BIP NPN 5A 50V
***nell
TRANSISTOR, BIPOL, NPN, 50V, TO-251-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 330MHz; Power Dissipation Pd: 15W; DC Collector Current: 8A; DC Current Gain hFE: 200hFE; Trans
***emi
Bipolar Transistor, 50V, 3A, Low VCE(sat) NPN Single TP/TP-FA hFE = 200-400
***ure Electronics
Bipolar (BJT) Transistor NPN 50V 3A 150MHz 1W Surface Mount 2-TP-FA
***(Formerly Allied Electronics)
ON Semi 2SD1802T-TL-E NPN Bipolar Transistor; 3 A; 50 V; 3-Pin TP-FA
***enic
1Ã×A 50V 1W 3A 150MHz 190mV@2A100mA NPN +150¡Í@(Tj) TO-252-3 Bipolar Transistors - BJT ROHS
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***Yang
Trans GP BJT NPN 50V 3A 3-Pin(2+Tab) TP-FA T/R - Tape and Reel
***ark
TRANSISTOR, NPN, 50V, 3A, TO-251; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:400; Transistor Case ;RoHS Compliant: Yes
***el Electronic
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 24W
***ical
Trans GP BJT NPN 450V 1.5A 3-Pin(3+Tab) TO-251 Box
***et
PWR HI VOLTAGE TRANSISTOR TO251 TUBE 3.6K
***emi
3.0 A, 100 V NPN Bipolar Power Transistor
***Yang
Trans GP BJT NPN 100V 3A 3-Pin(3+Tab) IPAK Tube - Rail/Tube
*** Stop Electro
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin
***(Formerly Allied Electronics)
ON Semi 2SD1815T-TL-E NPN Bipolar Transistor; 3 A; 100 V; 3-Pin TP-FA
***Yang
Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) TP-FA T/R - Tape and Reel
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***ark
TRANSISTOR, NPN, 100V, 3A, TO-251; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Typ Gain Bandwidth ft:180MHz; Power Dissipation Pd:20W; DC Collector Current:3A; DC Current Gain hFE:400; Transistor Case ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2SC5707-E
DISTI # 30599680		ON SemiconductorTrans GP BJT NPN 50V 8A 3-Pin(3+Tab) TP Bag
RoHS: Compliant		87
  • 50:$0.7319
  • 10:$1.0978
  • 8:$3.5827
2SC5707-E
DISTI # 2SC5707-EOS-ND		ON SemiconductorTRANS NPN 50V 8A TP
RoHS: Compliant
Min Qty: 1
Container: Bag		2364In Stock
  • 1000:$0.3512
  • 500:$0.4336
  • 100:$0.5428
  • 10:$0.7020
  • 1:$0.7900
2SC5707-E
DISTI # C1S722000067824		ON SemiconductorTrans GP BJT NPN 50V 8A 3-Pin(3+Tab) TP Bag
RoHS: Not Compliant		87
  • 50:$0.5740
  • 10:$0.8610
  • 1:$2.8100
2SC5707-E
DISTI # 2SC5707-E		ON SemiconductorTrans GP BJT NPN 50V 8A 3-Pin(3+Tab) TP Bag (Alt: 2SC5707-E)
RoHS: Compliant
Min Qty: 1
Container: Bag		Europe - 3000
  • 1:€0.7467
  • 25:€0.6658
  • 100:€0.4184
  • 250:€0.4013
  • 500:€0.3967
  • 1000:€0.3249
  • 2000:€0.2690
2SC5707-E
DISTI # 2SC5707-E		ON SemiconductorTrans GP BJT NPN 50V 8A 3-Pin(3+Tab) TP Bag - Bulk (Alt: 2SC5707-E)
RoHS: Compliant
Min Qty: 2000
Container: Bulk		Americas - 0
  • 2000:$0.2559
  • 3000:$0.2539
  • 5000:$0.2509
  • 10000:$0.2479
  • 20000:$0.2419
2SC5707-E
DISTI # 863-2SC5707-E		ON SemiconductorBipolar Transistors - BJT BIP NPN 8A 50V
RoHS: Compliant		136
  • 1:$0.7400
  • 10:$0.6090
  • 100:$0.3930
  • 1000:$0.3140
  • 2500:$0.2650
  • 10000:$0.2560
  • 25000:$0.2460
2SC5707-TL-E
DISTI # 863-2SC5707-TL-E		ON SemiconductorBipolar Transistors - BJT BIP NPN 8A 50V
RoHS: Compliant		0
  • 1:$0.6500
  • 10:$0.5350
  • 100:$0.3450
  • 700:$0.2760
  • 2100:$0.2330
  • 9800:$0.2250
  • 24500:$0.2160
2SC5707-EON Semiconductor 544
  • 144:$0.2520
  • 31:$0.4200
  • 1:$0.8400
2SC5707-EON SemiconductorINSTOCK430
    2SC5707-E
    DISTI # 2317572    		ON SemiconductorTRANSISTOR, NPN, 50V, 8A, TO-251-3
    RoHS: Compliant    		24
    • 1:$1.1800
    • 10:$0.9640
    • 100:$0.6220
    • 1000:$0.4970
    • 2500:$0.4190
    • 10000:$0.4060
    • 25000:$0.3900
    2SC5707-EON SemiconductorBip Transistor 50V8A NPN TP/TP-FA385
    • 1:$0.7800
    • 100:$0.4000
    • 500:$0.3700
    • 1000:$0.3200
    2SC5707-E
    DISTI # 2317572    		ON SemiconductorTRANSISTOR, NPN, 50V, 8A, TO-251-3
    RoHS: Compliant    		0
    • 5:£0.5300
    • 25:£0.4870
    • 100:£0.3030
    • 250:£0.2700
    • 500:£0.2370
    Bild Teil # Beschreibung
    2SC6097-E

    Mfr.#: 2SC6097-E

    OMO.#: OMO-2SC6097-E

    		 Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
    2SA2040-E

    Mfr.#: 2SA2040-E

    OMO.#: OMO-2SA2040-E

    		 Bipolar Transistors - BJT BIP PNP 8A 50V
    MJE200STU

    Mfr.#: MJE200STU

    OMO.#: OMO-MJE200STU

    		 Bipolar Transistors - BJT NPN Epitaxial Sil
    PG164140

    Mfr.#: PG164140

    OMO.#: OMO-PG164140

    		 Hardware Debuggers PICKit 4 MPLAB
    SS9018HBU

    Mfr.#: SS9018HBU

    OMO.#: OMO-SS9018HBU-ON-SEMICONDUCTOR

    		 RF Bipolar Transistors NPN/30V/50mA
    R82DC4100DQ60J

    Mfr.#: R82DC4100DQ60J

    OMO.#: OMO-R82DC4100DQ60J-KEMET

    		 Film Capacitors 1.0uF 63volts 5%
    CX90B1-24P

    Mfr.#: CX90B1-24P

    OMO.#: OMO-CX90B1-24P-HIROSE

    		 USB connecto
    2SC6097-E

    Mfr.#: 2SC6097-E

    OMO.#: OMO-2SC6097-E-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
    2SA2040-E

    Mfr.#: 2SA2040-E

    OMO.#: OMO-2SA2040-E-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT BIP PNP 8A 50V
    PG164140

    Mfr.#: PG164140

    OMO.#: OMO-PG164140-MICROCHIP-TECHNOLOGY

    		 PROGRAMMER MCU PICKIT 4
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von 2SC5707-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,74 $
    0,74 $
    10
    0,61 $
    6,09 $
    100
    0,39 $
    39,30 $
    1000
    0,31 $
    314,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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