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IXTH52N65X

IXTH52N65X
Mfr. #:
IXTH52N65X
Hersteller:
Littelfuse
Beschreibung:
MOSFET 650V/9A Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTH52N65X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH52N65X DatasheetIXTH52N65X Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXTH52N65X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
52 A
Rds On - Drain-Source-Widerstand:
68 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
113 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
660 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
X-Klasse
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
16 ns
Produktart:
MOSFET
Anstiegszeit:
57 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
63 ns
Typische Einschaltverzögerungszeit:
26 ns
Gewichtseinheit:
0.056438 oz
Tags
IXTH5, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class Power MOSFETs
IXYS X-Class Power MOSFETs are high-power density N-Channel Enhancement Mode MOSFETs. They are easy to mount and have a low RDS(ON) and QG with a low package inductance. Typical applications include switch-mode and resonant-mode power supplies, DC-DC converters and PFC circuits.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXTH52N65X
DISTI # IXTH52N65X-ND		IXYS CorporationMOSFET N-CH 650V 52A TO-247
RoHS: Compliant
Min Qty: 60
Container: Tube		Temporarily Out of Stock
  • 60:$7.0930
IXTH52N65X
DISTI # 747-IXTH52N65X		IXYS CorporationMOSFET 650V/9A Power MOSFET
RoHS: Compliant		30
  • 1:$9.9400
  • 10:$8.9500
  • 25:$7.4500
  • 50:$6.9200
  • 100:$6.7700
  • 250:$6.1800
  • 500:$5.6300
  • 1000:$5.3700
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MC33368DG

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Verfügbarkeit
Aktie:
30
Auf Bestellung:
2013
Menge eingeben:
Der aktuelle Preis von IXTH52N65X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,94 $
9,94 $
10
8,95 $
89,50 $
25
7,45 $
186,25 $
50
6,92 $
346,00 $
100
6,77 $
677,00 $
250
6,18 $
1 545,00 $
500
5,63 $
2 815,00 $
1000
5,37 $
5 370,00 $
2500
4,60 $
11 500,00 $
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