RN1113MFV(TPL3)

RN1113MFV(TPL3)
Mfr. #:
RN1113MFV(TPL3)
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RN1113MFV(TPL3) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
N
Aufbau:
Single
Polarität des Transistors:
NPN
Montageart:
SMD/SMT
Paket / Koffer:
VESM-3
DC-Kollektor/Basisverstärkung hfe Min:
700
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
100 mA
Pd - Verlustleistung:
150 mW
Maximale Betriebstemperatur:
+ 150 C
Serie:
RN1113MFV
Verpackung:
Spule
Kollektor- Basisspannung VCBO:
50 V
DC-Stromverstärkung hFE Max:
120 @ 1mA @ 5V
Emitter- Basisspannung VEBO:
5 V
Höhe:
0.5 mm
Länge:
1.2 mm
Breite:
0.8 mm
Marke:
Toshiba
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
8000
Unterkategorie:
Transistoren
Tags
RN1113MFV, RN1113M, RN1113, RN111, RN11, RN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
X34 Pb-F VESM TRANSISTOR Pd 150mW F 1Mhz (LF)
***i-Key
TRANS PREBIAS NPN 150MW VESM
***
100MA 50VOLTS 3PIN 47KOHMS
***et
Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
***i-Key
TRANS PREBIAS NPN 150MW VESM
***
50V VCBO 50V VCEO 100MA IC
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ical
Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R
***nell
DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTC043Z Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ical
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VMT T/R
***nell
DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 10kohm; Resis
***et
X34 Pb-F VESM TRANSISTOR Pd 150mW F 1Mhz (LF)
***i-Key
TRANS PREBIAS NPN 150MW VESM
***
2.2KOHMS X 10KOHMS
***ure Electronics
DTC143Z Series 50 V 100 mA Surface Mount NPN Digital Transistor - VMT-3
***ical
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VMT T/R
***ark
Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.1(Ratio) Rohs Compliant: Yes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
***el Electronic
LDO Regulator Pos 1.8V 0.25A 6-Pin TDFN EP T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A VESM
Teil # Mfg. Beschreibung Aktie Preis
RN1113MFV(TPL3)
DISTI # RN1113MFV(TPL3)
Toshiba America Electronic ComponentsX34 Pb-F VESM TRANSISTOR Pd 150mW F 1Mhz (LF) - Tape and Reel (Alt: RN1113MFV(TPL3))
RoHS: Compliant
Min Qty: 8000
Container: Reel
Americas - 0
    RN1113MFV(TPL3)
    DISTI # 757-RN1113MFV(TPL3)
    Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
    RoHS: Not compliant
    0
      RN1113MFV(TPL3)Toshiba America Electronic Components 8000
        Bild Teil # Beschreibung
        RN1113MFV,L3F

        Mfr.#: RN1113MFV,L3F

        OMO.#: OMO-RN1113MFV-L3F

        Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 47kohm
        RN1113MFV,L37F

        Mfr.#: RN1113MFV,L37F

        OMO.#: OMO-RN1113MFV-L37F

        Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
        RN1113MFV(TPL3)

        Mfr.#: RN1113MFV(TPL3)

        OMO.#: OMO-RN1113MFV-TPL3-

        Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
        RN1113MFV(TPL3)

        Mfr.#: RN1113MFV(TPL3)

        OMO.#: OMO-RN1113MFV-TPL3--123

        Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
        RN1113MFVTPL3

        Mfr.#: RN1113MFVTPL3

        OMO.#: OMO-RN1113MFVTPL3-1190

        Neu und Original
        RN1113MFVL3F-ND

        Mfr.#: RN1113MFVL3F-ND

        OMO.#: OMO-RN1113MFVL3F-ND-1190

        Neu und Original
        RN1113MF

        Mfr.#: RN1113MF

        OMO.#: OMO-RN1113MF-1190

        Neu und Original
        RN1113MFV

        Mfr.#: RN1113MFV

        OMO.#: OMO-RN1113MFV-1190

        Neu und Original
        RN1113MFV(TL3,T)

        Mfr.#: RN1113MFV(TL3,T)

        OMO.#: OMO-RN1113MFV-TL3-T--1190

        Neu und Original
        RN1113MFV,L3F

        Mfr.#: RN1113MFV,L3F

        OMO.#: OMO-RN1113MFV-L3F-TOSHIBA-SEMICONDUCTOR-AND-STOR

        X34 PB-F VESM TRANSISTOR PD 150M
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von RN1113MFV(TPL3) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,30 $
        0,30 $
        10
        0,20 $
        1,95 $
        100
        0,08 $
        8,20 $
        1000
        0,06 $
        56,00 $
        2500
        0,04 $
        105,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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