 | | | |
| PartNumber | RN1113MFV(TPL3) | RN1113MFV | RN1113MFV(TL3,T) |
| Description | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | N | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VESM-3 | - | - |
| DC Collector/Base Gain hfe Min | 700 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN1113MFV | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| DC Current Gain hFE Max | 120 @ 1mA @ 5V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1113MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 47kohm | |
| RN1113MFV,L37F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | ||
| RN1113MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms | ||
| RN1113MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms | ||
| RN1113MFVTPL3 | Neu und Original | ||
| RN1113MFVL3F-ND | Neu und Original | ||
| RN1113MFV | Neu und Original | ||
| RN1113MFV(TL3,T) | Neu und Original | ||
| RN1113MFV,L3F | X34 PB-F VESM TRANSISTOR PD 150M |