RN1113MF

RN1113MFV,L3F vs RN1113MFV,L37F vs RN1113MFV(TPL3)

 
PartNumberRN1113MFV,L3FRN1113MFV,L37FRN1113MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 47kohmBipolar Transistors - Pre-Biased Bias Resistor Built-in TransistorBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
ConfigurationSingleSingleSingle
Transistor PolarityNPNNPNNPN
Typical Input Resistor47 kOhms47 kOhms-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-723-3SOT-723-3VESM-3
DC Collector/Base Gain hfe Min120120700
Collector Emitter Voltage VCEO Max50 V50 V50 V
Continuous Collector Current100 mA100 mA100 mA
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW150 mW150 mW
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesRN1113MFVRN1113MFVRN1113MFV
PackagingReelReelReel
Emitter Base Voltage VEBO5 V5 V5 V
BrandToshibaToshibaToshiba
Channel ModeEnhancement--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity800080008000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000053 oz--
Number of Channels-1 Channel-
Collector Base Voltage VCBO--50 V
DC Current Gain hFE Max--120 @ 1mA @ 5V
Height--0.5 mm
Length--1.2 mm
Width--0.8 mm
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1113MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 47kohm
RN1113MFV,L37F Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
RN1113MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
RN1113MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
RN1113MFV,L3F X34 PB-F VESM TRANSISTOR PD 150M
RN1113MFVTPL3 Neu und Original
RN1113MFVL3F-ND Neu und Original
RN1113MF Neu und Original
RN1113MFV Neu und Original
RN1113MFV(TL3,T) Neu und Original
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