IXFH36N60P

IXFH36N60P
Mfr. #:
IXFH36N60P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 600V 36A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH36N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH36N60P DatasheetIXFH36N60P Datasheet (P4)
ECAD Model:
Mehr Informationen:
IXFH36N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
36 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
650 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
21.46 mm
Länge:
16.26 mm
Serie:
IXFH36N60
Transistortyp:
1 N-Channel
Breite:
5.3 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
39 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
80 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.229281 oz
Tags
IXFH36, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 190 mO PolarHT hiPerFET Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-247AD
***ukat
N-Ch 600V 36A 650W 0,19R TO247AD
***ark
Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFH36N60P
DISTI # IXFH36N60P-ND
IXYS CorporationMOSFET N-CH 600V 36A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
93In Stock
  • 510:$6.1551
  • 120:$7.3463
  • 30:$8.1407
  • 1:$9.9300
IXFH36N60P
DISTI # 58M7600
IXYS CorporationMOSFET, N, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:650W,MSL:-RoHS Compliant: Yes40
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
IXFH36N60P
DISTI # 747-IXFH36N60P
IXYS CorporationMOSFET 600V 36A
RoHS: Compliant
695
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
  • 1000:$5.6100
IXFH36N60PIXYS Corporation36 A, 600 V, 0.19 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AD5
  • 4:$5.4000
  • 2:$7.2000
  • 1:$10.8000
IXFH36N60P
DISTI # 1427299
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
40
  • 1:$15.8300
  • 30:$12.9800
  • 120:$11.7100
  • 510:$9.8200
IXFH36N60P
DISTI # 1427299
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
40
  • 1:£8.7400
  • 5:£8.1500
  • 10:£6.1000
  • 50:£5.6800
  • 100:£5.5500
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OMO.#: OMO-664LC2600K5HM6

Film Capacitors 0.66uF 600VAC 10% Conduction Cooled
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Optical Sensors Optical Switches, Reflective, Phototransistor Output Output Phototranstr Input Diode
664LC2600K5HM6

Mfr.#: 664LC2600K5HM6

OMO.#: OMO-664LC2600K5HM6-ILLINOIS-CAPACITOR

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IXFH36N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,03 $
9,03 $
10
8,21 $
82,10 $
25
7,40 $
185,00 $
50
7,22 $
361,00 $
100
6,67 $
667,00 $
250
6,45 $
1 612,50 $
500
5,59 $
2 795,00 $
1000
5,19 $
5 190,00 $
2500
4,80 $
12 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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