SIZ340DT-T1-GE3

Name: Vishay - SIZ340DT-T1-GE3
Brand: Vishay
SKU: OMO-4549492
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIZ340DT-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET 2N-CH 30V 30A PWRPAIR3X3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIZ340DT-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIZ340DT-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller

Produktkategorie: FETs - Arrays

Serie: PowerPAIRR, TrenchFETR

Verpackung: Digi-ReelR Alternative Verpackung

Montageart: SMD/SMT

Handelsname: TrenchFET

Paket-Koffer: 8-PowerWDFN

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: 8-Power33 (3x3)

Aufbau: Dual

FET-Typ: 2 N-Channel (Half Bridge)

Leistung max: 16.7W, 31W

Transistor-Typ: 2 N-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 760pF @ 15V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 30A, 40A

Rds-On-Max-Id-Vgs: 9.5 mOhm @ 15.6A, 10V

Vgs-th-Max-Id: 2.4V @ 250μA

Gate-Lade-Qg-Vgs: 19nC @ 10V

Pd-Verlustleistung: 16.7 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 7 ns

Anstiegszeit: 55 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 30 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.4 V

Rds-On-Drain-Source-Widerstand: 9.5 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 16 ns

Typische-Einschaltverzögerungszeit: 13 ns

Qg-Gate-Ladung: 12.3 nC

Kanal-Modus: Erweiterung

Tags: SIZ34, SiZ3, SiZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ340DT-T1-GE3 Beschreibung

***Components: In a Pack of 20, Dual N-Channel MOSFET, 30 A, 40 A, 30 V, 8-Pin PowerPAIR Vishay SIZ340DT-T1-GE3

***ical: Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R

***et Europe: Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R

***ied Electronics & Automation: MOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP

***ure Electronics: MOSFET 2N-CH 30V 30A SOT-23

***ark: MOSFET, DUAL N-CH, 30V, 40A, POWERPAIR-8

***i-Key: MOSFET 2N-CH 30V 30A PWRPAIR3X3

***et: DUAL N-CH POWERPAIR 3X3 30V 9.5 MOHM@10V

***: DUAL N-CHANNEL 30-V (D-S)

SIZ340DT-T1-GE3 Mehr Informationen

Dual N-Channel TrenchFET® Power MOSFETs: Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIZ340DT-T1-GE3 DISTI # SIZ340DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 30A PWRPAIR3X3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4096
SIZ340DT-T1-GE3 DISTI # SIZ340DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 30A PWRPAIR3X3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4521 500:$0.5726 100:$0.7384 10:$0.9340 1:$1.0500
SIZ340DT-T1-GE3 DISTI # SIZ340DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 30A PWRPAIR3X3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4521 500:$0.5726 100:$0.7384 10:$0.9340 1:$1.0500
SIZ340DT-T1-GE3 DISTI # SIZ340DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.3869 12000:$0.3749 18000:$0.3599 30000:$0.3499 60000:$0.3409
SIZ340DT-T1-GE3 DISTI # SIZ340DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.3869 12000:$0.3749 18000:$0.3599 30000:$0.3499 60000:$0.3409
SIZ340DT-T1-GE3 DISTI # 29X6567	Vishay Intertechnologies	Trans MOSFET Array Dual N-CH 30V 30A/40A 9-Pin PowerPAIR Case - Product that comes on tape, but is not reeled (Alt: 29X6567) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.9400 25:$0.7670 50:$0.6780 100:$0.5880 250:$0.5470 500:$0.5060 1000:$0.3990
SIZ340DT-T1-GE3 DISTI # 29X6568	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes	0	1:$0.4150 6000:$0.4130 9000:$0.3940 12000:$0.3540
SIZ340DT-T1-GE3 DISTI # 29X6567	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes	0	1:$0.9400 25:$0.7670 50:$0.6780 100:$0.5880 250:$0.5470 500:$0.5060 1000:$0.3990
SIZ340DT-T1-GE3 DISTI # 55X3089	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V , RoHS Compliant: Yes	0	1:$0.9400 25:$0.7670 50:$0.6780 100:$0.5880 250:$0.5470 500:$0.5060 1000:$0.3990
SIZ340DT-T1-GE3 DISTI # 70617613	Vishay Siliconix	MOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP RoHS: Compliant	0	100:$0.5800 1500:$0.4300 3000:$0.3900 6000:$0.3700
SIZ340DT-T1-GE3 DISTI # 78-SIZ340DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3 RoHS: Compliant	0	1:$0.9400 10:$0.7670 100:$0.5880 500:$0.5060 1000:$0.4790 3000:$0.4440
SIZ340DT-T1-GE3 DISTI # 2422226	Vishay Intertechnologies	MOSFET, DUAL N CH, 30V, 40A, POWERPAIR RoHS: Compliant	0	1:$1.5000 10:$1.2200 100:$0.9310 500:$0.8020 1000:$0.6320 3000:$0.5910 6000:$0.5600 9000:$0.5400
SIZ340DT-T1-GE3 DISTI # 2422226RL	Vishay Intertechnologies	MOSFET, DUAL N CH, 30V, 40A, POWERPAIR RoHS: Compliant	0	1:$1.5000 10:$1.2200 100:$0.9310 500:$0.8020 1000:$0.6320 3000:$0.5910 6000:$0.5600 9000:$0.5400
SIZ340DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3	Americas -
SIZ340DT-T1-GE3 DISTI # 2422226	Vishay Intertechnologies	MOSFET, DUAL N CH, 30V, 40A, POWERPAIR RoHS: Compliant	0	5:£0.6070 25:£0.5950 100:£0.4440 250:£0.4290 500:£0.3910

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: SIZ340DT-T1-GE3

OMO.#: OMO-SIZ340DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3

Mfr.#: SIZ340DT-T1-GE3

OMO.#: OMO-SIZ340DT-T1-GE3-VISHAY

MOSFET 2N-CH 30V 30A PWRPAIR3X3

Mfr.#: SIZ340DT

OMO.#: OMO-SIZ340DT-1190

Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von SIZ340DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,50 $~~; ~~0,50 $~~

10: ~~0,47 $~~; ~~4,70 $~~

100: ~~0,45 $~~; ~~44,55 $~~

500: ~~0,42 $~~; ~~210,40 $~~

1000: ~~0,40 $~~; ~~396,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIZ34 7
SiZ3 14
SiZ 92

SIZ340DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes