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RQ3E120ATTB

RQ3E120ATTB
Mfr. #:
RQ3E120ATTB
Hersteller:
ROHM Semiconductor
Beschreibung:
MOSFET PCH -30V -12A MIDDLE POWER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RQ3E120ATTB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HSMT-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
39 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
61 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
62 nC
Pd - Verlustleistung:
2 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.85 mm
Länge:
3 mm
Transistortyp:
1 P-Channel
Breite:
2.4 mm
Marke:
ROHM Halbleiter
Abfallzeit:
95 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
140 ns
Typische Einschaltverzögerungszeit:
20 ns
Teil # Aliase:
RQ3E120AT
Tags
RQ3E120AT, RQ3E120A, RQ3E12, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
RQ3E120AT Series -30 V -39 A 8 mOhm Surface Mount Power Mosfet - HSMT-8
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerVDFN Surface Mount MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 8m Ω @ 12A, 10V 12A Ta 150°C TJ MOSFET P-CH 30V 12A HSMT8
***nell
MOSFET, P-CH, -30V, -39A, HSMT; Transistor Polarity: P Channel; Continuous Drain Current Id: -39A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0061ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 20W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Teil # Mfg. Beschreibung Aktie Preis
RQ3E120ATTB
DISTI # RQ3E120ATTBCT-ND		ROHM SemiconductorMOSFET P-CH 30V 12A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7411In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
RQ3E120ATTB
DISTI # RQ3E120ATTBDKR-ND		ROHM SemiconductorMOSFET P-CH 30V 12A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7411In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
RQ3E120ATTB
DISTI # RQ3E120ATTBTR-ND		ROHM SemiconductorMOSFET P-CH 30V 12A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 30000:$0.1835
  • 15000:$0.1863
  • 6000:$0.2001
  • 3000:$0.2139
RQ3E120ATTB
DISTI # RQ3E120ATTB		ROHM SemiconductorTrans MOSFET P-CH 30V ±12A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E120ATTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 30000:$0.1769
  • 18000:$0.1819
  • 12000:$0.1919
  • 6000:$0.2039
  • 3000:$0.2179
RQ3E120ATTB
DISTI # RQ3E120ATTB		ROHM SemiconductorTrans MOSFET P-CH 30V ±12A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E120ATTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Europe - 0
  • 30000:€0.2439
  • 18000:€0.2629
  • 12000:€0.2849
  • 6000:€0.3099
  • 3000:€0.3799
RQ3E120ATTB
DISTI # RQ3E120ATTB		ROHM SemiconductorTrans MOSFET P-CH 30V ±12A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E120ATTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Asia - 0
    RQ3E120ATTB
    DISTI # 10AC8918    		ROHM SemiconductorMOSFET, P-CH, -30V, -39A, HSMT,Transistor Polarity:P Channel,Continuous Drain Current Id:-39A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0061ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes510
    • 1000:$0.2370
    • 500:$0.2610
    • 250:$0.2840
    • 100:$0.3070
    • 50:$0.3730
    • 25:$0.4380
    • 10:$0.5040
    • 1:$0.6060
    RQ3E120ATTB
    DISTI # 755-RQ3E120ATTB    		ROHM SemiconductorMOSFET Pch -30V -12A Middle Power MOSFET
    RoHS: Compliant    		3929
    • 1:$0.6000
    • 10:$0.4990
    • 100:$0.3040
    • 1000:$0.2350
    • 3000:$0.2010
    • 9000:$0.1870
    • 24000:$0.1770
    • 45000:$0.1730
    RQ3E120ATTBROHM Semiconductor 1009
    • 223:$0.7200
    • 57:$0.9000
    • 1:$1.8000
    RQ3E120ATTB
    DISTI # 2706633    		ROHM SemiconductorMOSFET, P-CH, -30V, -39A, HSMT
    RoHS: Compliant    		507
    • 500:$0.4720
    • 100:$0.6000
    • 10:$0.8030
    • 1:$0.9300
    RQ3E120ATTB
    DISTI # 2706633    		ROHM SemiconductorMOSFET, P-CH, -30V, -39A, HSMT1082
    • 500:£0.2220
    • 250:£0.2310
    • 100:£0.2410
    • 10:£0.4410
    • 1:£0.5450
    RQ3E120ATTBROHM Semiconductor 30
    • 1:¥8.1688
    • 100:¥4.6317
    • 1500:¥2.9365
    • 3000:¥2.1877
    RQ3E120ATTBROHM SemiconductorMOSFET PCH -30V -12A MIDDLE POWER
    RoHS: Compliant    		Americas -
      RQ3E120ATTBROHM SemiconductorRoHS(ship within 1day)37
      • 1:$1.0100
      • 10:$0.7600
      • 50:$0.5100
      • 100:$0.4000
      • 500:$0.3800
      • 1000:$0.3600
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      Verfügbarkeit
      Aktie:
      685
      Auf Bestellung:
      2668
      Menge eingeben:
      Der aktuelle Preis von RQ3E120ATTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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