IXTY2N60P

IXTY2N60P
Mfr. #:
IXTY2N60P
Hersteller:
IXYS
Beschreibung:
IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTY2N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXTY2N60
Verpackung
Rohr
Gewichtseinheit
0.012346 oz
Montageart
SMD/SMT
Handelsname
PolarHV
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
55 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
23 ns
Anstiegszeit
20 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
2 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Widerstand
5.1 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
60 ns
Typische-Einschaltverzögerungszeit
28 ns
Qg-Gate-Ladung
7 nC
Vorwärts-Transkonduktanz-Min
1.4 S
Kanal-Modus
Erweiterung
Tags
IXTY2N, IXTY2, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IXTY2N60P
DISTI # IXTY2N60P-ND
IXYS CorporationMOSFET N-CH 600V 2A D-PAK
RoHS: Compliant
Min Qty: 70
Container: Tube
Limited Supply - Call
    IXTY2N60P
    DISTI # 747-IXTY2N60P
    IXYS CorporationMOSFET 2.0 Amps 600 V 4.7 Ohm Rds
    RoHS: Compliant
    94
    • 1:$1.2500
    • 10:$1.1300
    • 25:$0.9810
    • 50:$0.9190
    • 100:$0.9060
    • 250:$0.7350
    • 500:$0.7050
    • 1000:$0.5840
    • 2500:$0.4900
    Bild Teil # Beschreibung
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    Mfr.#: IXTY1R4N120PHV

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    IXTY08N100P

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    Mfr.#: IXTY08N100D2TRL

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    Mfr.#: IXTY2N100P

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    IGBT Transistors MOSFET 1.6 Amps 500 V 6 Ohm Rds
    IXTY08N120P

    Mfr.#: IXTY08N120P

    OMO.#: OMO-IXTY08N120P-IXYS-CORPORATION

    MOSFET 0.8 Amps 1200V 25 Rds
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von IXTY2N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,74 $
    0,74 $
    10
    0,70 $
    6,98 $
    100
    0,66 $
    66,15 $
    500
    0,62 $
    312,40 $
    1000
    0,59 $
    588,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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