BDP947H6327XTSA1

BDP947H6327XTSA1
Mfr. #:
BDP947H6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
Bipolar Transistors - BJT AF TRANSISTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BDP947H6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
45 V
Kollektor- Basisspannung VCBO:
45 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
500 mV
Maximaler DC-Kollektorstrom:
3 A
Bandbreitenprodukt fT gewinnen:
100 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Spule
Marke:
Infineon-Technologien
Pd - Verlustleistung:
5 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Teil # Aliase:
947 BDP H6327 SP000748376
Gewichtseinheit:
0.003951 oz
Tags
BDP947H, BDP947, BDP94, BDP9, BDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Bipolar (BJT) Transistor NPN 45 V 3 A 1MHz 5 W Surface Mount PG-SOT223-4
***itex
Transistor: NPN; bipolar; 45V; 3A; 5W; -65+150 deg.C; SMD; SOT223; AEC-Q100
***roFlash
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
***ow.cn
Trans GP BJT NPN 45V 3A 5000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
***ronik
NPN TRANSISTOR 45V 3A 5W SOT223 RoHSconf
***ineon SCT
NPN Bipolar Transistor, SOT223, RoHS
***nell
TRANSISTOR, BIPOL, NPN, 45V, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 5W; DC Collector Current: 3A; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
BDP947H6327XTSA1
DISTI # BDP947H6327XTSA1-ND
Infineon Technologies AGTRANS NPN 45V 3A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    BDP947H6327XTSA1
    DISTI # BDP947H6327XTSA1
    Infineon Technologies AGTrans GP BJT NPN 45V 3A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BDP947H6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.3629
    • 5000:$0.3619
    • 8000:$0.3609
    • 15000:$0.3599
    • 30000:$0.3589
    BDP947H6327XTSA1
    DISTI # 96Y5617
    Infineon Technologies AGTRANSISTOR, BIPOL, NPN, 45V, SOT-223-4,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:45V,Transition Frequency ft:100MHz,Power Dissipation Pd:5W,DC Collector Current:3A,DC Current Gain hFE:50hFE,Transistor Case RoHS Compliant: Yes3160
    • 1:$0.6700
    • 10:$0.5530
    • 25:$0.4880
    • 50:$0.4220
    • 100:$0.3570
    • 250:$0.3330
    • 500:$0.3100
    • 1000:$0.2860
    BDP947H6327XTSA1
    DISTI # 726-BDP947H6327XTSA1
    Infineon Technologies AGBipolar Transistors - BJT AF TRANSISTORS
    RoHS: Compliant
    4668
    • 1:$0.6700
    • 10:$0.5530
    • 100:$0.3570
    • 1000:$0.2860
    BDP 947 H6327
    DISTI # 726-BDP947H6327
    Infineon Technologies AGBipolar Transistors - BJT AF TRANSISTOR
    RoHS: Compliant
    0
      BDP947H6327XTSA1
      DISTI # BDP947
      Infineon Technologies AGTransistor: NPN,bipolar,45V,3A,5W,SOT2231297
      • 5:$0.4040
      • 25:$0.3650
      • 100:$0.3099
      • 250:$0.2628
      • 1000:$0.2479
      BDP947H6327XTSA1
      DISTI # BDP947
      Infineon Technologies AGNPN 45V 3A 5W B:100-475 SOT223
      RoHS: Compliant
      10900
      • 100:€0.2545
      • 500:€0.2245
      • 1000:€0.2145
      • 3000:€0.2065
      BDP947H6327XTSA1
      DISTI # 2443456
      Infineon Technologies AGTRANSISTOR, BIPOL, NPN, 45V, SOT-223-4
      RoHS: Compliant
      4970
      • 5:£0.4810
      • 25:£0.4460
      • 100:£0.2750
      • 250:£0.2450
      • 500:£0.2160
      Bild Teil # Beschreibung
      BC817-40WT1G

      Mfr.#: BC817-40WT1G

      OMO.#: OMO-BC817-40WT1G

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      Mfr.#: SM6T200A

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      BDP948H6433XTMA1

      Mfr.#: BDP948H6433XTMA1

      OMO.#: OMO-BDP948H6433XTMA1

      Bipolar Transistors - BJT AF TRANSISTORS
      BDP 948 H6327

      Mfr.#: BDP 948 H6327

      OMO.#: OMO-BDP-948-H6327

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      RURG5060

      Mfr.#: RURG5060

      OMO.#: OMO-RURG5060

      Diodes - General Purpose, Power, Switching TO-247 Ultra Fast
      SS14

      Mfr.#: SS14

      OMO.#: OMO-SS14

      Schottky Diodes & Rectifiers SMA 40V 1.0A
      B43547A9187M000

      Mfr.#: B43547A9187M000

      OMO.#: OMO-B43547A9187M000

      Aluminum Electrolytic Capacitors - Snap In 400VDC 180uF 20% PVC STD 6.3mm Term
      SM6T200A

      Mfr.#: SM6T200A

      OMO.#: OMO-SM6T200A-STMICROELECTRONICS

      TVS DIODE 171V 353V SMB
      RURG5060

      Mfr.#: RURG5060

      OMO.#: OMO-RURG5060-ON-SEMICONDUCTOR

      DIODE GEN PURP 600V 50A TO247
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1987
      Menge eingeben:
      Der aktuelle Preis von BDP947H6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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