 |  | |
| PartNumber | BDP947H6327XTSA1 | BDP947H6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTORS | |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | - |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 45 V | - |
| Collector Base Voltage VCBO | 45 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 500 mV | 500 mV |
| Maximum DC Collector Current | 3 A | 3 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | - |
| Pd Power Dissipation | 5 W | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 947 BDP H6327 SP000748376 | - |
| Unit Weight | 0.003951 oz | 0.006632 oz |
| Part Aliases | - | 947 BDP H6327 SP000748376 |
| Package Case | - | SOT-223-4 |
| Pd Power Dissipation | - | 5 W |
| Collector Emitter Voltage VCEO Max | - | 45 V |
| Collector Base Voltage VCBO | - | 45 V |
| Emitter Base Voltage VEBO | - | 5 V |
| DC Collector Base Gain hfe Min | - | 50 at 2 A 2 V |
| DC Current Gain hFE Max | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BDP947H6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTORS | |
Infineon Technologies |
BDP947H6327 | Neu und Original | |
| BDP947H6327XTSA1 | TRANS NPN 45V 3A SOT223 |