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STF12NM50N

STF12NM50N
Mfr. #:
STF12NM50N
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STF12NM50N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STF12NM50N Mehr Informationen STF12NM50N Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
25 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.3 mm
Länge:
10.4 mm
Serie:
STF12NM50N
Transistortyp:
1 N-Channel
Typ:
Leistungs-MOSFET
Breite:
4.6 mm
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
8 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.011640 oz
Tags
STF12NM5, STF12NM, STF12N, STF12, STF1, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 11A 3-Pin (3+Tab) TO-220FP Tube
***icroelectronics
N-channel 500V - 0.29Ohm - 11A - TO-220 /FP- D2PAK - DPAK
***ser
Power MOSFET Transistors N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh
***r Electronics
Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, 500V, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220FP; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:350mJ; Current, Idm Pulse:44A; Power, Pd:25W; Resistance, Rds on @ Vgs = 10V:0.38ohm; Voltage, Rds Measurement:10V; Voltage, Vds:550V; Voltage, Vds Max:600V; Voltage, Vgs Max:25V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
Teil # Mfg. Beschreibung Aktie Preis
STF12NM50ND
DISTI # 497-16200-5-ND		STMicroelectronicsMOSFET N-CH 500V 11A TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		1988In Stock
  • 1000:$2.3978
  • 500:$2.7942
  • 100:$3.3887
  • 50:$3.6938
  • 1:$4.5300
STF12NM50N
DISTI # 497-4804-5-ND		STMicroelectronicsMOSFET N-CH 500V 11A TO220FP
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    STF12NM50ND
    DISTI # STF12NM50ND    		STMicroelectronicsTrans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220FP Tube (Alt: STF12NM50ND)
    RoHS: Compliant
    Min Qty: 50
    Container: Tube    		Europe - 0
    • 50:€0.9989
    • 100:€0.8169
    • 200:€0.7489
    • 300:€0.6919
    • 500:€0.6419
    STF12NM50N
    DISTI # 511-STF12NM50N    		STMicroelectronicsMOSFET N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh
    RoHS: Compliant    		0
      STF12NM50ND
      DISTI # 511-STF12NM50ND      		STMicroelectronicsMOSFET N-channel 500 V 11 A Fdmesh
      RoHS: Compliant      		430
      • 1:$3.6600
      • 10:$3.1100
      • 100:$2.7000
      • 250:$2.5600
      • 500:$2.3000
      • 1000:$1.9400
      STF12NM50NDSTMicroelectronicsPower Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		Europe - 1000
        Bild Teil # Beschreibung
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        OMO.#: OMO-STF12N65M2

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        OMO.#: OMO-STF12NM60N

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        Mfr.#: STF12N50M2

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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von STF12NM50N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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