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IPD30N03S4L09ATMA1

IPD30N03S4L09ATMA1
Mfr. #:
IPD30N03S4L09ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 30A TO252-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD30N03S4L09ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPD30N03S4, IPD30N03, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 50, N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK Infineon IPD30N03S4L09ATMA1
***p One Stop Japan
Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
***ronik
MOSFET 30V 9.0mOHM AECQ TO252
***ark
MOSFET, N-CH, 30V, 30A, TO-252-3
***i-Key
MOSFET N-CH 30V 30A TO252-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:42W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 30V 30A TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0073ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.5V; Dissipazione di Potenza Pd:42W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
Teil # Mfg. Beschreibung Aktie Preis
IPD30N03S4L09ATMA1
DISTI # V72:2272_06391066		Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2345
  • 1000:$0.3122
  • 500:$0.3469
  • 250:$0.3855
  • 100:$0.5263
  • 25:$0.6665
  • 10:$0.8146
  • 1:$0.8723
IPD30N03S4L09ATMA1
DISTI # V36:1790_06391066		Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD30N03S4L09ATMA1
    DISTI # IPD30N03S4L09ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		101443In Stock
    • 1000:$0.3722
    • 500:$0.4653
    • 100:$0.5885
    • 10:$0.7680
    • 1:$0.8700
    IPD30N03S4L09ATMA1
    DISTI # IPD30N03S4L09ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		101443In Stock
    • 1000:$0.3722
    • 500:$0.4653
    • 100:$0.5885
    • 10:$0.7680
    • 1:$0.8700
    IPD30N03S4L09ATMA1
    DISTI # IPD30N03S4L09ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		100000In Stock
    • 12500:$0.3011
    • 5000:$0.3049
    • 2500:$0.3275
    IPD30N03S4L09ATMA1
    DISTI # 31440690    		Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		2345
    • 1000:$0.3122
    • 500:$0.3469
    • 250:$0.3855
    • 100:$0.5263
    • 25:$0.6665
    • 24:$0.8146
    IPD30N03S4L09ATMA1
    DISTI # IPD30N03S4L09ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S4L09ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 2500
    • 25000:$0.2649
    • 15000:$0.2719
    • 10000:$0.2789
    • 5000:$0.2859
    • 2500:$0.2939
    IPD30N03S4L09ATMA1
    DISTI # IPD30N03S4L09ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N03S4L09ATMA1)
    Min Qty: 1316
    Container: Bulk    		Americas - 0
    • 13160:$0.2409
    • 6580:$0.2449
    • 3948:$0.2539
    • 2632:$0.2629
    • 1316:$0.2729
    IPD30N03S4L09ATMA1
    DISTI # 50Y2030    		Infineon Technologies AGMOSFET Transistor, N Channel, 30 A, 30 V, 0.0073 ohm, 10 V, 1.5 V RoHS Compliant: Yes0
    • 1000:$0.3480
    • 500:$0.3770
    • 250:$0.4060
    • 100:$0.4350
    • 50:$0.5150
    • 25:$0.5940
    • 10:$0.6740
    • 1:$0.8080
    IPD30N03S4L-09
    DISTI # 726-IPD30N03S4L09    		Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
    RoHS: Compliant    		10855
    • 1:$0.8000
    • 10:$0.6670
    • 100:$0.4310
    • 1000:$0.3450
    • 2500:$0.2910
    • 10000:$0.2800
    • 25000:$0.2690
    IPD30N03S4L09ATMA1Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    RoHS: Compliant    		1844
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    IPD30N03S4L09ATMA1
    DISTI # 8269522P    		Infineon Technologies AGMOSFET N-CH 30A 30V OPTIMOS-T2 TO252, RL1150
    • 1000:£0.2280
    • 500:£0.2650
    • 250:£0.2740
    • 100:£0.2830
    IPD30N03S4L09ATMA1
    DISTI # 2480825RL    		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
    RoHS: Compliant    		0
    • 10000:$0.4310
    • 2500:$0.4480
    • 1000:$0.5310
    • 100:$0.6630
    • 10:$1.0400
    • 1:$1.2400
    IPD30N03S4L09ATMA1
    DISTI # 2480825    		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
    RoHS: Compliant    		599
    • 10000:$0.4310
    • 2500:$0.4480
    • 1000:$0.5310
    • 100:$0.6630
    • 10:$1.0400
    • 1:$1.2400
    IPD30N03S4L09ATMA1
    DISTI # 2480825    		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3594
    • 500:£0.3810
    • 250:£0.4470
    • 100:£0.5130
    • 25:£0.6670
    • 5:£0.7430
    Bild Teil # Beschreibung
    IPD30N03S4L-09

    Mfr.#: IPD30N03S4L-09

    OMO.#: OMO-IPD30N03S4L-09

    		 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
    IPD30N03S2L-10

    Mfr.#: IPD30N03S2L-10

    OMO.#: OMO-IPD30N03S2L-10

    		 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
    IPD30N03S2L-20

    Mfr.#: IPD30N03S2L-20

    OMO.#: OMO-IPD30N03S2L-20

    		 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
    IPD30N03S4L09ATMA1

    Mfr.#: IPD30N03S4L09ATMA1

    OMO.#: OMO-IPD30N03S4L09ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 30A TO252-3
    IPD30N03S2L-07

    Mfr.#: IPD30N03S2L-07

    OMO.#: OMO-IPD30N03S2L-07-1190

    		 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
    IPD30N03S2L-08

    Mfr.#: IPD30N03S2L-08

    OMO.#: OMO-IPD30N03S2L-08-1190

    		 Neu und Original
    IPD30N03S2L-10

    Mfr.#: IPD30N03S2L-10

    OMO.#: OMO-IPD30N03S2L-10-1190

    		 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
    IPD30N03S2L10ATMA1

    Mfr.#: IPD30N03S2L10ATMA1

    OMO.#: OMO-IPD30N03S2L10ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 30A TO252-3
    IPD30N03S4L-09

    Mfr.#: IPD30N03S4L-09

    OMO.#: OMO-IPD30N03S4L-09-1190

    		 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
    IPD30N03S4L14ATMA1

    Mfr.#: IPD30N03S4L14ATMA1

    OMO.#: OMO-IPD30N03S4L14ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 30A TO252-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von IPD30N03S4L09ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,36 $
    0,36 $
    10
    0,34 $
    3,43 $
    100
    0,33 $
    32,52 $
    500
    0,31 $
    153,55 $
    1000
    0,29 $
    289,10 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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