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DMN2112SN-7

DMN2112SN-7
Mfr. #:
DMN2112SN-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 20V 1.2A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN2112SN-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN2112SN-7 DatasheetDMN2112SN-7 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
DMN2112SN-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SC-59-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
1.2 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
500 mV
Vgs - Gate-Source-Spannung:
8 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
500 mW (1/2 W)
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Produkt:
MOSFET Kleinsignal
Serie:
DMN21
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
65 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
10 ns
Gewichtseinheit:
0.000282 oz
Tags
DMN211, DMN21, DMN2, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Teil # Mfg. Beschreibung Aktie Preis
DMN2112SN-7
DISTI # DMN2112SNDICT-ND		Diodes IncorporatedMOSFET N-CH 20V 1.2A SC59-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3013In Stock
  • 1000:$0.1220
  • 500:$0.1626
  • 100:$0.2371
  • 10:$0.3460
  • 1:$0.4400
DMN2112SN-7
DISTI # DMN2112SNDIDKR-ND		Diodes IncorporatedMOSFET N-CH 20V 1.2A SC59-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3013In Stock
  • 1000:$0.1220
  • 500:$0.1626
  • 100:$0.2371
  • 10:$0.3460
  • 1:$0.4400
DMN2112SN-7
DISTI # DMN2112SNDITR-ND		Diodes IncorporatedMOSFET N-CH 20V 1.2A SC59-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.1184
DMN2112SN-7
DISTI # 70551240		Diodes IncorporatedN-Channel Enhancement Mode FET SC-59
RoHS: Compliant		0
  • 250:$0.2200
  • 750:$0.1800
  • 1500:$0.1600
  • 3000:$0.1300
DMN2112SN-7
DISTI # 621-DMN2112SN-7		Diodes IncorporatedMOSFET 20V 1.2A
RoHS: Compliant		1549
  • 1:$0.4900
  • 10:$0.3390
  • 100:$0.1560
  • 1000:$0.1200
  • 3000:$0.1020
DMN2112SN-7Diodes Incorporated 3401
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von DMN2112SN-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,48 $
    0,48 $
    10
    0,34 $
    3,39 $
    100
    0,16 $
    15,60 $
    1000
    0,12 $
    120,00 $
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