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STGWT30V60DF

STGWT30V60DF
Mfr. #:
STGWT30V60DF
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT30V60DF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT30V60DF Mehr Informationen STGWT30V60DF Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
IGBTs - Single
Serie
600-650V IGBTs
Verpackung
Rohr
Gewichtseinheit
0.238311 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-3P-3, SC-65-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3P
Aufbau
Single
Leistung max
258W
Reverse-Recovery-Time-trr
53ns
Strom-Kollektor-Ic-Max
60A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
120A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 30A
Schaltenergie
383μJ (on), 233μJ (off)
Gate-Gebühr
163nC
Td-ein-aus-25°C
45ns/189ns
Testbedingung
400V, 30A, 10 Ohm, 15V
Pd-Verlustleistung
258 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.35 V
Kontinuierlicher Kollektorstrom-bei-25-C
60 A
Gate-Emitter-Leckstrom
250 nA
Maximale Gate-Emitter-Spannung
20 V
Tags
STGWT30V, STGWT30, STGWT3, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-3P Tube
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P
***Components
IGBT Trench gate,600V 30A/100 deg,TO-3P
***i-Key
IGBT 600V 60A 258W TO3P-3
***et
STMICROELECTRONICS STGWT30V60DF
***ark
Ptd High Voltage
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Teil # Mfg. Beschreibung Aktie Preis
STGWT30V60DF
DISTI # 497-13770-5-ND		STMicroelectronicsIGBT 600V 60A 258W TO3P-3
RoHS: Compliant
Min Qty: 1
Container: Tube		106In Stock
  • 1020:$1.9727
  • 510:$2.3391
  • 120:$2.7477
  • 30:$3.1703
  • 1:$3.7300
STGWT30V60DF
DISTI # STGWT30V60DF		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3P - Rail/Tube (Alt: STGWT30V60DF)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$1.7900
  • 1200:$1.6900
  • 1800:$1.5900
  • 3000:$1.4900
  • 6000:$1.4900
STGWT30V60DF
DISTI # 511-STGWT30V60DF		STMicroelectronicsIGBT Transistors 600V 30A High Speed Trench Gate IGBT
RoHS: Compliant		269
  • 1:$3.5500
  • 10:$3.0200
  • 100:$2.6100
  • 250:$2.4800
  • 500:$2.2200
  • 1000:$1.8700
  • 2500:$1.7800
STGWT30V60DF
DISTI # 7917661P		STMicroelectronicsIGBT TRENCH GATE 600V 30A/100 DEG TO-3P, TU230
  • 25:£1.0600
Bild Teil # Beschreibung
STGWT30V60DF

Mfr.#: STGWT30V60DF

OMO.#: OMO-STGWT30V60DF

 IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGWT30V60F

Mfr.#: STGWT30V60F

OMO.#: OMO-STGWT30V60F

 IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
STGWT30H65FB

Mfr.#: STGWT30H65FB

OMO.#: OMO-STGWT30H65FB

 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
STGWT38IH130D

Mfr.#: STGWT38IH130D

OMO.#: OMO-STGWT38IH130D

 IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
STGWT38IH130D

Mfr.#: STGWT38IH130D

OMO.#: OMO-STGWT38IH130D-STMICROELECTRONICS

 IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
STGWT30V60DF

Mfr.#: STGWT30V60DF

OMO.#: OMO-STGWT30V60DF-STMICROELECTRONICS

 IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGWT30H60DFB

Mfr.#: STGWT30H60DFB

OMO.#: OMO-STGWT30H60DFB-STMICROELECTRONICS

 IGBT Transistors IGBT & Power Bipola
STGWT30V60F

Mfr.#: STGWT30V60F

OMO.#: OMO-STGWT30V60F-STMICROELECTRONICS

 IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
STGWT30V60DF GWT30V60DF

Mfr.#: STGWT30V60DF GWT30V60DF

OMO.#: OMO-STGWT30V60DF-GWT30V60DF-1190

 Neu und Original
STGWT38IH130D,GWT38IH130

Mfr.#: STGWT38IH130D,GWT38IH130

OMO.#: OMO-STGWT38IH130D-GWT38IH130-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von STGWT30V60DF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,24 $
2,24 $
10
2,12 $
21,23 $
100
2,01 $
201,15 $
500
1,90 $
949,90 $
1000
1,79 $
1 788,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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