IRG4PH20KPBF

IRG4PH20KPBF
Mfr. #:
IRG4PH20KPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 1200V UltraFast 4-20kHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG4PH20KPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4PH20KPBF DatasheetIRG4PH20KPBF Datasheet (P4-P6)IRG4PH20KPBF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IRG4PH20KPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1.2 kV
Kollektor-Emitter-Sättigungsspannung:
3.17 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
11 A
Pd - Verlustleistung:
60 W
Minimale Betriebstemperatur:
- 55 C
Verpackung:
Rohr
Höhe:
20.7 mm
Länge:
15.87 mm
Breite:
5.31 mm
Marke:
Infineon-Technologien
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
IGBTs
Teil # Aliase:
SP001540532
Gewichtseinheit:
1.340411 oz
Tags
IRG4PH2, IRG4PH, IRG4P, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IRG4PH20KPBF Series 1200 V 5 A N-Channel UltraFast IGBT - TO-247AC
***ernational Rectifier
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
***ical
Trans IGBT Chip N-CH 1.2KV 11A 3-Pin(3+Tab) TO-247AC
***ineon
Target Applications: Refridgeration
***i-Key
IGBT UFAST 1200V 11A TO247AC
***trelec
IGBT [IR] IRG4PH20KPBF IGBT
***et Europe
IGBT 1200V 11A 60W TO247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11A; Collector Emitter Saturation Voltage, Vce(sat):4.3V; Power Dissipation, Pd:60W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, 1200V, 11A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:11A; Voltage, Vce Sat Max:3.17V; Power Dissipation:60W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:22A; No. of Pins:3; Power, Pd:60W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:400ns; Time, Fall Max:620ns; Time, Rise:28ns; Time, Short Circuit Withstand Min:10µs; Transistors, No. of:1
***ment14 APAC
IGBT, 1200V, 11A, TO-247AC; Transistor Type:IGBT; DC Collector Current:11A; Collector Emitter Voltage Vces:3.17V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:11A; Current Temperature:25°C; Fall Time Max:620ns; Fall Time tf:400ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:22A; Rise Time:28ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRG4PH20KPBF
DISTI # IRG4PH20KPBF-ND
Infineon Technologies AGIGBT 1200V 11A 60W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
270In Stock
  • 1000:$1.7760
  • 500:$2.1059
  • 100:$2.4738
  • 25:$2.8544
  • 1:$3.3600
IRG4PH20KPBF
DISTI # 27012189
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 11A 60000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
70
  • 10:$2.5750
  • 4:$2.9760
IRG4PH20KPBF
DISTI # SP001540532
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 11A 3-Pin(3+Tab) TO-247AC (Alt: SP001540532)
RoHS: Compliant
Min Qty: 1
Europe - 975
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.2900
  • 1000:€1.2900
IRG4PH20KPBF
DISTI # IRG4PH20KPBF
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 11A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PH20KPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$2.7900
  • 10:$2.4900
  • 25:$2.4900
  • 50:$2.3900
  • 100:$2.1900
  • 500:$1.9900
  • 1000:$1.6900
IRG4PH20KPBF
DISTI # 38K2942
Infineon Technologies AGIGBT Single Transistor, 11 A, 3.17 V, 60 W, 1.2 kV, TO-247AC, 3 , RoHS Compliant: Yes60
  • 1:$3.5200
  • 10:$2.9900
  • 25:$2.8600
  • 50:$2.7300
  • 100:$2.6000
  • 250:$2.4600
IRG4PH20KPBF
DISTI # 70018464
Infineon Technologies AG1200V ULTRAFAST 4-20 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
RoHS: Compliant
0
  • 1:$3.8400
  • 2:$3.7630
  • 5:$3.6480
  • 10:$3.4940
  • 25:$3.2640
IRG4PH20KPBFInternational Rectifier 
RoHS: Not Compliant
425
  • 1000:$1.5300
  • 500:$1.6100
  • 100:$1.6800
  • 25:$1.7500
  • 1:$1.8800
IRG4PH20KPBF
DISTI # 942-IRG4PH20KPBF
Infineon Technologies AGIGBT Transistors 1200V UltraFast 4-20kHz
RoHS: Compliant
523
  • 1:$3.2000
  • 10:$2.7200
  • 100:$2.3600
  • 250:$2.2400
IRG4PH20KPBF
DISTI # IRG4PH20KPBF
Infineon Technologies AGTransistor: IGBT,1200V,11A,60W,TO247-34
  • 1:$2.0867
  • 3:$1.8463
  • 10:$1.5764
  • 50:$1.4857
IRG4PH20KPBF
DISTI # C1S322000571482
Infineon Technologies AGIGBT Chip
RoHS: Compliant
70
  • 10:$2.5750
  • 1:$2.9760
IRG4PH20KPBF
DISTI # 8650667
Infineon Technologies AGIGBT, 1200V, 11A, TO-247AC
RoHS: Compliant
60
  • 1:$5.0700
  • 10:$4.3100
  • 100:$3.7400
  • 250:$3.5500
IRG4PH20KPBF
DISTI # 8650667
Infineon Technologies AGIGBT, 1200V, 11A, TO-247AC
RoHS: Compliant
88
  • 1:£2.7500
  • 10:£2.0800
  • 100:£1.8100
  • 250:£1.7100
  • 500:£1.6200
Bild Teil # Beschreibung
ISO122JP

Mfr.#: ISO122JP

OMO.#: OMO-ISO122JP

Isolation Amplifiers Precision Low Cost Isolation Amp
S8020LTP

Mfr.#: S8020LTP

OMO.#: OMO-S8020LTP

SCRs 800V 20A
D8020LTP

Mfr.#: D8020LTP

OMO.#: OMO-D8020LTP

SCRs 800V 20A
SMMBT4401LT1G

Mfr.#: SMMBT4401LT1G

OMO.#: OMO-SMMBT4401LT1G

Bipolar Transistors - BJT SMAL SGNL TRANS MINI BLK
C2M1000170D

Mfr.#: C2M1000170D

OMO.#: OMO-C2M1000170D

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
C2M0280120D

Mfr.#: C2M0280120D

OMO.#: OMO-C2M0280120D

MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
LT1084CT#PBF

Mfr.#: LT1084CT#PBF

OMO.#: OMO-LT1084CT-PBF

LDO Voltage Regulators 7.5A, 5A, 3A L Drop Pos Adj Regs
C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D

MOSFET G3 SiC MOSFET 900V, 120mOhm
43045-1413

Mfr.#: 43045-1413

OMO.#: OMO-43045-1413-410

Headers & Wire Housings MICRO-FIT 3.0 HEADER
SMMBT4401LT1G

Mfr.#: SMMBT4401LT1G

OMO.#: OMO-SMMBT4401LT1G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT SMAL SGNL TRANS MINI BLK
Verfügbarkeit
Aktie:
432
Auf Bestellung:
2415
Menge eingeben:
Der aktuelle Preis von IRG4PH20KPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,19 $
3,19 $
10
2,71 $
27,10 $
100
2,35 $
235,00 $
250
2,23 $
557,50 $
500
2,00 $
1 000,00 $
1000
1,69 $
1 690,00 $
2500
1,60 $
4 000,00 $
5000
1,54 $
7 700,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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