IXTP3N120

IXTP3N120
Mfr. #:
IXTP3N120
Hersteller:
Littelfuse
Beschreibung:
MOSFET MOSFET Id3 BVdass1200
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP3N120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP3N120 DatasheetIXTP3N120 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
3 A
Rds On - Drain-Source-Widerstand:
4.5 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
200 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.66 mm
Serie:
IXTP3N120
Transistortyp:
1 N-Channel
Breite:
4.83 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
1.5 S
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
32 ns
Typische Einschaltverzögerungszeit:
17 ns
Gewichtseinheit:
0.081130 oz
Tags
IXTP3N1, IXTP3N, IXTP3, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IXTP3N120
DISTI # V36:1790_07432830
IXYS CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220
RoHS: Compliant
6672
  • 2500:$3.0830
  • 1000:$3.1720
  • 500:$3.7570
  • 250:$4.4010
  • 100:$4.6310
  • 50:$5.0770
  • 25:$5.6400
  • 10:$6.2040
  • 1:$6.9366
IXTP3N120
DISTI # V99:2348_07432830
IXYS CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220
RoHS: Compliant
2
  • 2500:$3.0830
  • 1000:$3.1720
  • 500:$3.7570
  • 250:$4.4010
  • 100:$4.6310
  • 50:$5.0770
  • 25:$5.6400
  • 10:$6.2040
  • 1:$6.9366
IXTP3N120
DISTI # IXTP3N120-ND
IXYS CorporationMOSFET N-CH 1.2KV 3A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
5In Stock
  • 2500:$3.0191
  • 500:$3.7682
  • 100:$4.6535
  • 50:$5.1076
  • 10:$5.6750
  • 1:$6.3600
IXTP3N120
DISTI # 26938341
IXYS CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220
RoHS: Compliant
6672
  • 3:$6.9366
IXTP3N120
DISTI # 32631135
IXYS CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220
RoHS: Compliant
500
  • 50:$5.5312
IXTP3N120
DISTI # 31087268
IXYS CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220
RoHS: Compliant
208
  • 4:$3.0285
IXTP3N120
DISTI # 26612338
IXYS CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220
RoHS: Compliant
2
  • 2:$6.9366
IXTP3N120
DISTI # 58M7663
IXYS CorporationMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):4.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:200W,MSL:- RoHS Compliant: Yes60
  • 500:$3.8000
  • 250:$4.6200
  • 100:$4.7000
  • 50:$5.1500
  • 25:$5.7400
  • 10:$5.7900
  • 1:$6.4200
IXTP3N120IXYS CorporationSingle N-Channel 1200 V 4.5 Ohm 200 W Power Mosfet - TO-220
RoHS: Compliant
867Tube
  • 5:$5.9900
  • 25:$4.6800
  • 50:$4.4400
  • 100:$4.2100
  • 250:$3.9300
IXTP3N120
DISTI # 747-IXTP3N120
IXYS CorporationMOSFET MOSFET Id3 BVdass1200
RoHS: Compliant
807
  • 1:$6.3600
  • 10:$5.7300
  • 25:$5.6800
  • 50:$5.1000
  • 100:$4.6500
  • 250:$4.5700
  • 500:$3.7600
  • 1000:$3.1700
  • 2500:$3.1300
IXTP3N120IXYS Corporation 19
    IXTP3N120IXYS Corporation 9
      IXTP3N120
      DISTI # IXTP3N120
      IXYS CorporationTransistor: N-MOSFET,unipolar,1.2kV,3A,200W,TO220AB,700ns198
      • 50:$3.3400
      • 10:$3.7300
      • 3:$4.2100
      • 1:$4.6800
      IXTP3N120
      DISTI # IXTP3N120
      IXYS CorporationN-Ch 1200V 3A 200W 4,5R TO220AB
      RoHS: Compliant
      57
      • 1:€6.9000
      • 5:€3.9000
      • 20:€2.9000
      • 50:€2.7900
      IXTP3N120
      DISTI # 1427369
      IXYS CorporationMOSFET, N, TO-220
      RoHS: Compliant
      60
      • 500:$5.6400
      • 100:$6.9700
      • 50:$7.6500
      • 1:$9.5100
      IXTP3N120
      DISTI # 1427369
      IXYS CorporationMOSFET, N, TO-22096
      • 500:£3.0100
      • 250:£3.6600
      • 100:£3.7300
      • 10:£4.0800
      • 1:£5.6100
      IXTP3N120
      DISTI # XSFP00000002831
      IXYS CorporationSingle N-Channel 1000 Vds 240 mOhm 700 WPowerMosfet - SOT-227B
      RoHS: Compliant
      468 in Stock0 on Order
      • 468:$6.2400
      • 22:$6.6900
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      Verfügbarkeit
      Aktie:
      805
      Auf Bestellung:
      2788
      Menge eingeben:
      Der aktuelle Preis von IXTP3N120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      6,36 $
      6,36 $
      10
      5,73 $
      57,30 $
      25
      5,68 $
      142,00 $
      50
      5,10 $
      255,00 $
      100
      4,65 $
      465,00 $
      250
      4,57 $
      1 142,50 $
      500
      3,76 $
      1 880,00 $
      1000
      3,17 $
      3 170,00 $
      2500
      3,13 $
      7 825,00 $
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