PartNumber | IXTP3N100P | IXTP3N100D2 | IXTP3N110 |
Description | MOSFET 3 Amps 1000V 4.8 Rds | MOSFET N-CH MOSFETS (D2) 1000V 3A | MOSFET 3 Amps 1100V 4 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
Id Continuous Drain Current | 3 A | 3 A | - |
Rds On Drain Source Resistance | 4.8 Ohms | 6 Ohms | - |
Vgs th Gate Source Threshold Voltage | 4.8 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 39 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | Polar | - | - |
Packaging | Tube | Tube | Tube |
Height | 16 mm | - | - |
Length | 10.66 mm | - | - |
Series | IXTP3N100 | IXTP3N100 | IXTP3N110 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Polar Power MOSFET | - | - |
Width | 4.83 mm | - | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 1.5 S | - | - |
Fall Time | 29 ns | - | 18 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 27 ns | - | 15 ns |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 75 ns | - | 32 ns |
Typical Turn On Delay Time | 22 ns | - | 17 ns |
Unit Weight | 0.081130 oz | 0.081130 oz | 0.012346 oz |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 150 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 3 A |
Vds Drain Source Breakdown Voltage | - | - | 1100 V |
Rds On Drain Source Resistance | - | - | 4 Ohms |