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SIDR610DP-T1-GE3

SIDR610DP-T1-GE3
Mfr. #:
SIDR610DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CHAN 200V PPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR610DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIDR610DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR610DP-T1-GE3
DISTI # V99:2348_22587802		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET0
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 3000:$1.7199
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIDR610DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.4900
    • 18000:$1.5900
    • 30000:$1.5900
    • 6000:$1.6900
    • 12000:$1.6900
    SIDR610DP-T1-GE3
    DISTI # 99AC0534    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:39.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0239ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$2.0600
    • 250:$2.3000
    • 100:$2.3700
    • 50:$2.5500
    • 25:$2.7200
    • 10:$2.8900
    • 1:$3.4800
    SIDR610DP-T1-GE3
    DISTI # 81AC3429    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET0
    • 20000:$1.5200
    • 12000:$1.5400
    • 8000:$1.6000
    • 4000:$1.7200
    • 2000:$1.8500
    • 1:$1.9300
    SIDR610DP-T1-GE3
    DISTI # 78-SIDR610DP-T1-GE3    		Vishay IntertechnologiesMOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		5934
    • 1:$3.4500
    • 10:$2.8600
    • 100:$2.3500
    • 250:$2.2800
    • 500:$2.0400
    • 1000:$1.7200
    • 3000:$1.6400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W0
    • 500:£1.4900
    • 250:£1.6700
    • 100:£1.7200
    • 10:£2.0900
    • 1:£2.8400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W
    RoHS: Compliant    		0
    • 1000:$2.2800
    • 500:$2.5000
    • 250:$2.7600
    • 100:$2.9800
    • 10:$3.7400
    • 1:$4.8200
    Bild Teil # Beschreibung
    SIDR610DP-T1-GE3

    Mfr.#: SIDR610DP-T1-GE3

    OMO.#: OMO-SIDR610DP-T1-GE3

    		 MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
    SIDR610DP-T1-GE3

    Mfr.#: SIDR610DP-T1-GE3

    OMO.#: OMO-SIDR610DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 200V PPAK SO-8DC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von SIDR610DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,24 $
    2,24 $
    10
    2,12 $
    21,23 $
    100
    2,01 $
    201,15 $
    500
    1,90 $
    949,90 $
    1000
    1,79 $
    1 788,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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