IPD180N10N3 G

Mfr. #:: IPD180N10N3 G
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD180N10N3 G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 43 A

Rds On - Drain-Source-Widerstand:: 14.7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 25 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 71 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 20 S

Abfallzeit:: 5 ns

Produktart:: MOSFET

Anstiegszeit:: 12 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 19 ns

Typische Einschaltverzögerungszeit:: 12 ns

Teil # Aliase:: IPD180N10N3GBTMA1 IPD18N1N3GXT SP000482438

Gewichtseinheit:: 0.139332 oz

Tags: IPD180N10N3, IPD18, IPD1, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD180N10N3 G Bewertungen und Rezensionen

A***i

All OK. Quick delivery.

2019-06-11

E**a

Excellent thank you

2019-06-15

P***v

The goods are not received, and the seller allegedly executed the order. Sad.

2019-04-16

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD180N10N3GATMA1 DISTI # 33599151	Infineon Technologies AG	MV POWER MOS	2500	2500:$0.4760
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1TR-ND	Infineon Technologies AG	MV POWER MOS RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.4375 2500:$0.4594
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 43A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 43A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1CT-ND	Infineon Technologies AG	MV POWER MOS RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5070 500:$0.6422 100:$0.7773 10:$0.9970 1:$1.1200
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1DKR-ND	Infineon Technologies AG	MV POWER MOS RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5070 500:$0.6422 100:$0.7773 10:$0.9970 1:$1.1200
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 43A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4594
IPD180N10N3GBTMA1 DISTI # V36:1790_22937432	Infineon Technologies AG	Trans MOSFET N-CH 100V 43A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD180N10N3GATMA1 DISTI # V72:2272_09156944	Infineon Technologies AG	MV POWER MOS	0
IPD180N10N3GATMA1 DISTI # V36:1790_09156944	Infineon Technologies AG	MV POWER MOS	0
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1	Infineon Technologies AG	MV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3169 15000:$0.3229 10000:$0.3339 5000:$0.3469 2500:$0.3599
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3169 15000:$0.3229 10000:$0.3339 5000:$0.3469 2500:$0.3599
IPD180N10N3GATMA1 DISTI # 47Y8049	Infineon Technologies AG	MOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V RoHS Compliant: Yes	0
IPD180N10N3 G DISTI # 726-IPD180N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 RoHS: Compliant	0	1:$1.0200 10:$0.8750 100:$0.6720 500:$0.5940 1000:$0.4690 2500:$0.4160 10000:$0.4010
IPD180N10N3GATMA1 DISTI # 726-IPD180N10N3GATMA	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	127	1:$1.0200 10:$0.8750 100:$0.6720 500:$0.5940 1000:$0.4690 2500:$0.4160 10000:$0.4010
IPD180N10N3GBTMA1 DISTI # 726-IPD180N10N3GBTMA	Infineon Technologies AG	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 RoHS: Compliant	0	1:$1.0200 10:$0.8750 100:$0.6720 500:$0.5940 1000:$0.4690 2500:$0.4160 10000:$0.4010
IPD180N10N3GATMA1	Infineon Technologies AG	Single N-Channel 100 V 18 mOhm 19 nC OptiMOS Power Mosfet - DPAK RoHS: Compliant	5000Reel	2500:$0.3400
IPD180N10N3 G	Infineon Technologies AG		250
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,43A,71W,PG-TO252-3	1057	1000:$0.5535 100:$0.5945 10:$0.6844 3:$0.8519 1:$0.9901
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,43A,71W,PG-TO252-3	1047	1000:$0.5506 100:$0.5914 10:$0.6809 3:$0.8474 1:$0.9850
IPD180N10N3G	Infineon Technologies AG		512
IPD180N10N3GBTMA1 DISTI # 2617464	Infineon Technologies AG	MOSFET, N-CH, 100V, 43A, TO-252-3 RoHS: Compliant	0	1000:$0.7320 500:$0.7870 250:$0.8880 100:$0.9930 10:$1.2300 1:$1.4900
IPD180N10N3G	Infineon Technologies AG		1663
IPD180N10N3G	Infineon Technologies AG	100V,43A,N Channel Power MOSFET	45	1:$0.7300 100:$0.6100 500:$0.5400 1000:$0.5200
IPD180N10N3GATMA1 DISTI # XSFP00000107622	Infineon Technologies AG	RoHS: Compliant	5000 in Stock0 on Order	5000:$0.4533 2500:$0.4857
IPD180N10N3GATMA1 DISTI # XSKDRABV0051532	Infineon Technologies AG	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.5648 2500:$0.6052

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPD180N10N3GATMA1 OMO.#: OMO-IPD180N10N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPD180N10N3GBTMA1 OMO.#: OMO-IPD180N10N3GBTMA1	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
	Mfr.#: IPD180N10N3 G OMO.#: OMO-IPD180N10N3-G	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
	Mfr.#: IPD180N10N3GBTMA1 OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 43A TO252-3
	Mfr.#: IPD180N10N3GATMA1 OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES	MV POWER MOS
	Mfr.#: IPD180N10N3GATMA1-CUT TAPE OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190	Neu und Original
	Mfr.#: IPD180N10N OMO.#: OMO-IPD180N10N-1190	Neu und Original
	Mfr.#: IPD180N10N3 G OMO.#: OMO-IPD180N10N3-G-1190	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
	Mfr.#: IPD180N10N3GATMA1 , 2SD2 OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190	Neu und Original
	Mfr.#: IPD180N10N3G OMO.#: OMO-IPD180N10N3G-124	Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von IPD180N10N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,02 $~~; ~~1,02 $~~

10: ~~0,88 $~~; ~~8,75 $~~

100: ~~0,67 $~~; ~~67,20 $~~

500: ~~0,59 $~~; ~~297,00 $~~

1000: ~~0,47 $~~; ~~469,00 $~~

Beginnen mit

IPD180N10N3 7
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IPD1 167
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