SIHB15N60E-GE3

Mfr. #:: SIHB15N60E-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIHB15N60E-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHB15N60E-GE3 Datasheet SIHB15N60E-GE3 Datasheet (P4-P6)SIHB15N60E-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: SIHB15N60E-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 650 V

Id - Kontinuierlicher Drainstrom:: 15 A

Rds On - Drain-Source-Widerstand:: 280 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4 V

Vgs - Gate-Source-Spannung:: 30 V

Qg - Gate-Ladung:: 39 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 180 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Serie:: E

Marke:: Vishay / Siliconix

Abfallzeit:: 22 ns

Produktart:: MOSFET

Anstiegszeit:: 26 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 41 ns

Typische Einschaltverzögerungszeit:: 16 ns

Gewichtseinheit:: 0.050717 oz

Tags: SIHB15N60, SIHB15N6, SIHB15, SIHB1, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB15N60E-GE3 Bewertungen und Rezensionen

L***a

all right

2019-02-11

A***V

I received what i ordered, the terms are quite satisfactory. In the future you can order in this store.

2019-01-20

M***y

The goods did not receive, but the seller immediately returned the money, honest

2019-06-19

SIHB15N60E-GE3 Beschreibung

***ical: Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK

***ark: D2pak/To-263 Rohs Compliant: No

***nell: MOSFET, N CH, 600V, 15A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:180W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHB15N60E-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIHB15N60E-GE3 DISTI # V99:2348_09219015	Vishay Intertechnologies	Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK RoHS: Compliant	367	2500:$1.5169 1000:$1.5580 500:$1.8550 100:$2.1320 10:$2.5760 1:$3.4067
SIHB15N60E-GE3 DISTI # V36:1790_09219015	Vishay Intertechnologies	Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000000:$1.5270 500000:$1.5310 100000:$1.9160 10000:$2.6450 1000:$2.7700
SIHB15N60E-GE3 DISTI # SIHB15N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 15A DPAK RoHS: Compliant Min Qty: 1 Container: Bulk	311In Stock	5000:$1.5053 2500:$1.5641 1000:$1.6464 500:$1.9522 100:$2.2932 10:$2.7990 1:$3.1200
SIHB15N60E-GE3 DISTI # 25872788	Vishay Intertechnologies	Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK RoHS: Compliant	367	5:$3.4067
SIHB15N60E-GE3 DISTI # SIHB15N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB15N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.3900 10000:$1.3900 2000:$1.4900 4000:$1.4900 1000:$1.5900
SIHB15N60E-GE3 DISTI # SIHB15N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK (Alt: SIHB15N60E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.1900 50:€1.2900 100:€1.2900 500:€1.2900 25:€1.4900 10:€1.7900 1:€2.5900
SIHB15N60E-GE3 DISTI # 68W7033	Vishay Intertechnologies	Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7033) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	500:$1.8800 250:$2.0800 100:$2.1400 50:$2.2900 25:$2.4500 10:$2.6000 1:$3.1400
SIHB15N60E-GE3 DISTI # 68W7033	Vishay Intertechnologies	MOSFET, N CHANNEL, 600V, 15A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	1:$1.2500 10:$1.2500 25:$1.2500 50:$1.2500 100:$1.2500 250:$1.2500
SIHB15N60E-GE3 DISTI # 68W7034	Vishay Intertechnologies	MOSFET, N CH, 600V, 15A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	20000:$1.3800 12000:$1.4000 8000:$1.4600 4000:$1.5700 2000:$1.6800 1:$1.7600
SIHB15N60E-GE3. DISTI # 84AC2746	Vishay Intertechnologies	D2PAK/TO-263 ROHS COMPLIANT: NO	0	20000:$1.3800 12000:$1.4000 8000:$1.4600 4000:$1.5700 2000:$1.6800 1:$1.7600
SIHB15N60E-GE3 DISTI # 78-SIHB15N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	863	1:$3.1300 10:$2.5900 100:$2.1400 250:$2.0700
SIHB15N60E-GE3 DISTI # 7689304P	Vishay Intertechnologies	MOSFET N-CHANNEL 600V 15A D2PAK, RL	1053	200:£1.6600 100:£1.7100 50:£1.8100 10:£1.9900
SIHB15N60EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	900
SIHB15N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas -	1000:$1.7100 2000:$1.5900 5000:$1.5130
SIHB15N60E-GE3 DISTI # 2291552	Vishay Intertechnologies	MOSFET, N CH, 600V, 15A, DPAK	897	500:£1.5800 250:£1.6300 100:£1.6800 10:£2.0300 1:£2.7700
SIHB15N60E-GE3 DISTI # 2291552	Vishay Intertechnologies	MOSFET, N CH, 600V, 15A, DPAK RoHS: Compliant	717	2500:$2.3700 1000:$2.4900 500:$2.9500 100:$3.4600 10:$4.2200 1:$4.7000

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Verfügbarkeit

Aktie:: 863
Auf Bestellung:: 2846
Menge eingeben:

Der aktuelle Preis von SIHB15N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~3,13 $~~; ~~3,13 $~~

10: ~~2,59 $~~; ~~25,90 $~~

100: ~~2,14 $~~; ~~214,00 $~~

250: ~~2,07 $~~; ~~517,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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