PartNumber | SIHB15N60E-GE3 | SIHB15N65E-GE3 |
Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 700 V |
Id Continuous Drain Current | 15 A | 15 A |
Rds On Drain Source Resistance | 280 mOhms | 280 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V |
Qg Gate Charge | 39 nC | 48 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 180 W | 34 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Reel | Bulk |
Series | E | E |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 22 ns | 25 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 26 ns | 24 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 41 ns | 48 ns |
Typical Turn On Delay Time | 16 ns | 18 ns |
Unit Weight | 0.050717 oz | 0.050717 oz |