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SIHB15N65E-GE3

SIHB15N65E-GE3
Mfr. #:
SIHB15N65E-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB15N65E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHB15N65E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHB15N6, SIHB15, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 280 mO 34 nC Surface Mount Power Mosfet - D2PAK
***et Europe
Trans MOSFET N-CH 650V 15A 3-Pin D2PAK T/R
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB15N65E-GE3
DISTI # SIHB15N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 15A TO263
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.8963
SIHB15N65E-GE3
DISTI # SIHB15N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 15A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB15N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 4000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
SIHB15N65E-GE3
DISTI # SIHB15N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 15A 3-Pin D2PAK T/R (Alt: SIHB15N65E-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 500:€1.3900
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.9900
SIHB15N65E-GE3
DISTI # 78-SIHB15N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$3.6100
  • 10:$2.9900
  • 100:$2.4600
  • 250:$2.3800
  • 500:$2.1400
  • 1000:$1.8000
SIHB15N65E-GE3Vishay Intertechnologies 1000
    SIHB15N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      Bild Teil # Beschreibung
      SIHB15N60E-GE3

      Mfr.#: SIHB15N60E-GE3

      OMO.#: OMO-SIHB15N60E-GE3

      		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
      SIHB15N65E-GE3

      Mfr.#: SIHB15N65E-GE3

      OMO.#: OMO-SIHB15N65E-GE3

      		 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
      SIHB15N50E-GE3

      Mfr.#: SIHB15N50E-GE3

      OMO.#: OMO-SIHB15N50E-GE3-VISHAY

      		 IGBT Transistors MOSFET N-Channel 500V
      SIHB15N65E-GE3

      Mfr.#: SIHB15N65E-GE3

      OMO.#: OMO-SIHB15N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS
      SIHB15N60E-GE3-CUT TAPE

      Mfr.#: SIHB15N60E-GE3-CUT TAPE

      OMO.#: OMO-SIHB15N60E-GE3-CUT-TAPE-1190

      		 Neu und Original
      SIHB15N60E

      Mfr.#: SIHB15N60E

      OMO.#: OMO-SIHB15N60E-1190

      		 Neu und Original
      SIHB15N60E-GE3

      Mfr.#: SIHB15N60E-GE3

      OMO.#: OMO-SIHB15N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 15A DPAK
      SIHB15N60EGE3

      Mfr.#: SIHB15N60EGE3

      OMO.#: OMO-SIHB15N60EGE3-1190

      		 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      SIHB15N65E

      Mfr.#: SIHB15N65E

      OMO.#: OMO-SIHB15N65E-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von SIHB15N65E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,37 $
      2,37 $
      10
      2,25 $
      22,51 $
      100
      2,13 $
      213,24 $
      500
      2,01 $
      1 006,95 $
      1000
      1,90 $
      1 895,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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