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IRF1312PBF

IRF1312PBF
Mfr. #:
IRF1312PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 80V 1 N-CH HEXFET 10mOhms 93nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF1312PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1312PBF DatasheetIRF1312PBF Datasheet (P4-P6)IRF1312PBF Datasheet (P7-P9)IRF1312PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
95 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
93 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
210 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
4.4 mm
Marke:
Infineon / IR
Abfallzeit:
51 ns
Produktart:
MOSFET
Anstiegszeit:
130 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
SP001564478
Gewichtseinheit:
0.211644 oz
Tags
IRF1312, IRF131, IRF13, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
IRF1312PBF,MOSFET, 80V, 95A, 1 0 MOHM, 93 NC QG, TO-220AB<AZ
***ernational Rectifier
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***et
Trans MOSFET N-CH 80V 95A 3-Pin(3+Tab) TO-220AB
***ment14 APAC
MOSFET, N, 80V, 95A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:210W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:95A; Junction to Case Thermal Resistance A:0.73°C/W; On State resistance @ Vgs = 10V:10ohm; Package / Case:TO-220AB; Power Dissipation Pd:210W; Power Dissipation Pd:210W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:80V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRF1312PBF
DISTI # IRF1312PBF-ND		Infineon Technologies AGMOSFET N-CH 80V 95A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube		Limited Supply - Call
    IRF1312PBF
    DISTI # 70018164    		Infineon Technologies AGMOSFET,80V,95A,10 MOHM,93 NC QG,TO-220AB
    RoHS: Compliant    		0
    • 3000:$1.3900
    IRF1312PBF
    DISTI # 942-IRF1312PBF    		Infineon Technologies AGMOSFET 80V 1 N-CH HEXFET 10mOhms 93nC
    RoHS: Compliant    		0
      IRF1312PBF
      DISTI # 8657378      		Infineon Technologies AG 
      RoHS: Compliant      		0
      • 1:$6.2900
      • 10:$4.4100
      • 100:$3.4100
      • 250:$3.2000
      • 500:$3.0600
      • 1000:$2.9400
      Bild Teil # Beschreibung
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      OMO.#: OMO-IRF1324PBF-INFINEON-TECHNOLOGIES

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von IRF1312PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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