 |  | | |
| PartNumber | IRF1312PBF | IRF1312 | IRF1312L |
| Description | MOSFET 80V 1 N-CH HEXFET 10mOhms 93nC | ||
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 95 A | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 93 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 210 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 51 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 130 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 47 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Part # Aliases | SP001564478 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF1312PBF | MOSFET 80V 1 N-CH HEXFET 10mOhms 93nC | |
| IRF1312 | Neu und Original | ||
| IRF1312L | Neu und Original | ||
| IRF1312S | Neu und Original | ||
| IRF1312SPBF | Neu und Original | ||
Infineon Technologies |
IRF1312PBF | MOSFET N-CH 80V 95A TO-220AB |