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STP16N65M5

STP16N65M5
Mfr. #:
STP16N65M5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 650 Volt 12 Amp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP16N65M5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP16N65M5 Mehr Informationen STP16N65M5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
299 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
90 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.4 mm
Serie:
STP16N65M5
Transistortyp:
1 N-Channel
Breite:
4.6 mm
Marke:
STMicroelectronics
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
25 ns
Gewichtseinheit:
0.011640 oz
Tags
STP16N65, STP16N6, STP16N, STP16, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220
***roFlash
Mosfet Transistor, N Channel, 12 A, 650 V, 0.23 Ohm, 10 V, 4 V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N CH, 650V, 12A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 13A I(D), 550V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 550V, 13A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***icroelectronics
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
***ure Electronics
N-Channel 600 V 0.299 Ohm Falnge Mount FDmesh™ II MosFet - TO-220
***ical
Trans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
14 A 600 V 0.299 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220
***ical
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N CH, 500V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. of Pins:3Pins RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
***et
Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail
***enic
500V 12.5A 430m´Î@10V6.25A 170W 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ure Electronics
N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220
***ure Electronics
Single N-Channel 600 V 0.65 Ohm 34 nC 240 W DMOS Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,12A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:240W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STM MDmeshV Power MOSFETs - Thru-Hole
Teil # Mfg. Beschreibung Aktie Preis
STP16N65M5
DISTI # 32903893		STMicroelectronicsTrans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1100
  • 9:$1.1993
STP16N65M5
DISTI # 497-8788-5-ND		STMicroelectronicsMOSFET N-CH 650V 12A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		573In Stock
  • 2500:$2.2735
  • 500:$2.8376
  • 100:$3.3333
  • 50:$3.8462
  • 10:$4.0680
  • 1:$4.5300
STP16N65M5
DISTI # V36:1790_06564582		STMicroelectronicsTrans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000000:$1.8960
  • 500000:$1.9000
  • 100000:$2.3410
  • 10000:$3.1930
  • 1000:$3.3400
STP16N65M5
DISTI # STP16N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Tube (Alt: STP16N65M5)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 900
  • 1000:€1.7600
  • 500:€1.8900
  • 250:€2.0000
  • 100:€2.1300
  • 10:€2.2700
  • 1:€2.3900
STP16N65M5
DISTI # STP16N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP16N65M5)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$1.9900
  • 6000:$2.0900
  • 4000:$2.1900
  • 2000:$2.2900
  • 1000:$2.3900
STP16N65M5
DISTI # 94T3456		STMicroelectronicsMOSFET Transistor, N Channel, 12 A, 650 V, 0.23 ohm, 10 V, 4 V RoHS Compliant: Yes113
  • 1000:$2.5000
  • 500:$2.9200
  • 100:$3.3900
  • 10:$3.8800
  • 1:$4.5200
STP16N65M5
DISTI # 511-STP16N65M5		STMicroelectronicsMOSFET N-Ch 650 Volt 12 Amp
RoHS: Compliant		348
  • 1:$4.3100
  • 10:$3.6600
  • 100:$3.1700
  • 250:$3.0100
  • 500:$2.7000
  • 1000:$2.2800
  • 2000:$2.1600
STP16N65M5
DISTI # 6875298P		STMicroelectronicsMOSFET N-CHANNEL 650V 12A MDMESH TO220, TU28
  • 100:£2.3050
  • 50:£2.5400
  • 20:£2.5950
  • 10:£2.6550
STP16N65M5STMicroelectronics 217
  • 65:$3.6075
  • 18:$3.9000
  • 1:$5.8500
STP16N65M5
DISTI # STP16N65M5		STMicroelectronicsTransistor: N-MOSFET,unipolar,650V,7.3A,25W,TO220-389
  • 50:$1.7800
  • 10:$1.9700
  • 3:$2.4600
  • 1:$2.8600
STP16N65M5STMicroelectronics 
RoHS: Compliant		550
    STP16N65M5
    DISTI # STP16N65M5    		STMicroelectronicsN-Ch 650V 12A 90W 0,299R TO220
    RoHS: Compliant    		300
    • 10:€1.6500
    • 50:€1.3500
    • 200:€1.2000
    • 500:€1.1500
    STP16N65M5
    DISTI # TMOS1348    		STMicroelectronicsN-CH 650V 12A 279mOhm TO220
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 50:$1.7300
    • 100:$1.6400
    • 150:$1.5400
    • 300:$1.4000
    • 450:$1.3400
    STP16N65M5
    DISTI # 2098296    		STMicroelectronicsMOSFET, N CH, 650V, 12A, TO 220
    RoHS: Compliant    		113
    • 5000:$3.1300
    • 2000:$3.2600
    • 1000:$3.4400
    • 500:$4.0700
    • 250:$4.5400
    • 100:$4.7800
    • 10:$5.5200
    • 1:$6.5000
    STP16N65M5
    DISTI # 2098296    		STMicroelectronicsMOSFET, N CH, 650V, 12A, TO 220111
    • 500:£1.8500
    • 250:£2.0700
    • 100:£2.1800
    • 10:£2.5200
    • 1:£3.3000
    STP16N65M5
    DISTI # XSKDRABS0035288    		STMicroelectronics 
    RoHS: Compliant    		700 in Stock0 on Order
    • 700:$1.6200
    • 400:$1.7300
    STP16N65M5
    DISTI # XSKDRABV0040334    		STMicroelectronicsLED Driver, 16-Segment, PDSO24
    RoHS: Compliant    		450 in Stock0 on Order
    • 450:$1.6800
    • 400:$1.8000
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    Mfr.#: NSR1020MW2T1G

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    		 Schottky Diodes & Rectifiers SMALL SIG SCHOTTKY
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    Mfr.#: LM7805CT/NOPB

    OMO.#: OMO-LM7805CT-NOPB

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    Mfr.#: UCC25600DR

    OMO.#: OMO-UCC25600DR

    		 Switching Controllers LLC Half Bridge Resonant Cntrlr
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    Mfr.#: TPIC6595DWR

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    Mfr.#: 6224N

    OMO.#: OMO-6224N

    		 DC Fans DC Tubeaxial Fan, 172x51mm Round, 24VDC, 241.3CFM, 55dBA, 18W, Ball Bearing, Terminals
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    OMO.#: OMO-ADA4841-1YRJZ-R7-ANALOG-DEVICES

    		 Neu und Original
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    Mfr.#: 1025HC50-RTR

    OMO.#: OMO-1025HC50-RTR-EATON

    		 Fast-acting, high current, surface mount ceramic tube fuses
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    		 Fixed Inductors 10uH 5.1A SMT
    Verfügbarkeit
    Aktie:
    308
    Auf Bestellung:
    2291
    Menge eingeben:
    Der aktuelle Preis von STP16N65M5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,31 $
    4,31 $
    10
    3,66 $
    36,60 $
    100
    3,17 $
    317,00 $
    250
    3,01 $
    752,50 $
    500
    2,70 $
    1 350,00 $
    1000
    2,28 $
    2 280,00 $
    2000
    2,16 $
    4 320,00 $
    5000
    2,08 $
    10 400,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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