PartNumber | STP16N65M5 | STP16N65M2 | STP16N65M5,16N65M5 |
Description | MOSFET N-Ch 650 Volt 12 Amp | MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 12 A | 11 A | - |
Rds On Drain Source Resistance | 299 mOhms | 360 mOhms | - |
Vgs Gate Source Voltage | 25 V | 25 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 90 W | 110 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | - | - |
Packaging | Tube | Tube | - |
Height | 9.15 mm | - | - |
Length | 10.4 mm | - | - |
Series | STP16N65M5 | STP16N65M2 | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.6 mm | - | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 7 ns | 11.3 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9 ns | 8.2 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 30 ns | 36 ns | - |
Typical Turn On Delay Time | 25 ns | 11.3 ns | - |
Unit Weight | 0.011640 oz | 0.011640 oz | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Qg Gate Charge | - | 19.5 nC | - |