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SIHU6N65E-GE3

SIHU6N65E-GE3
Mfr. #:
SIHU6N65E-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHU6N65E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHU6N65E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHU6N6, SIHU6, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) IPAK
***ure Electronics
E Series N Channel 700 V 0.6 O 48 nC Through Hole Power Mosfet - TO-251
*** Europe
N-CH SINGLE 650V TO251
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHU6N65E-GE3
DISTI # SIHU6N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 6A IPAK
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.7425
SIHU6N65E-GE3
DISTI # SIHU6N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin IPAK T/R (Alt: SIHU6N65E-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.6299
  • 500:€0.6379
  • 100:€0.6489
  • 50:€0.6589
  • 25:€0.7449
  • 10:€0.9189
  • 1:€1.2809
SIHU6N65E-GE3
DISTI # SIHU6N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin IPAK T/R - Tape and Reel (Alt: SIHU6N65E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7049
  • 18000:$0.7239
  • 12000:$0.7449
  • 6000:$0.7759
  • 3000:$0.7999
SIHU6N65E-GE3
DISTI # 78-SIHU6N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		0
  • 1:$1.7000
  • 10:$1.4200
  • 100:$1.1000
  • 500:$0.9630
  • 1000:$0.7980
  • 2500:$0.7430
  • 5000:$0.7160
  • 10000:$0.6880
SIHU6N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		Americas -
    SIHU6N65E-GE3Vishay Intertechnologies 1500
      Bild Teil # Beschreibung
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3

      		 MOSFET 800V Vds 30V Vgs IPAK (TO-251)
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3

      		 MOSFET 620V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3

      		 MOSFET 650V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
      SIHU6N62E

      Mfr.#: SIHU6N62E

      OMO.#: OMO-SIHU6N62E-1190

      		 Neu und Original
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3-VISHAY

      		 MOSFET N-CHAN 800V TO-251
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SIHU6N65E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,06 $
      1,06 $
      10
      1,00 $
      10,04 $
      100
      0,95 $
      95,16 $
      500
      0,90 $
      449,35 $
      1000
      0,85 $
      845,90 $
      Beginnen mit
      Top