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SIHU6N62E-GE3

SIHU6N62E-GE3
Mfr. #:
SIHU6N62E-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHU6N62E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHU6N62E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHU6N6, SIHU6, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin IPAK
***nell
MOSFET, N CH, 620V, 6A, TO-251-3
***i-Key
MOSFET N-CH 620V 6A TO-251
***ponent Electronics
TO-251 75PCS/TUBE
***
N-CHANNEL 620V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3-ND		Vishay SiliconixMOSFET N-CH 620V 6A TO-251
Min Qty: 1
Container: Tube		2990In Stock
  • 5025:$0.6650
  • 2550:$0.7000
  • 525:$0.9500
  • 150:$1.1500
  • 75:$1.4000
  • 10:$1.4750
  • 1:$1.6500
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK - Tape and Reel (Alt: SIHU6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6099
  • 18000:$0.6269
  • 12000:$0.6449
  • 6000:$0.6719
  • 3000:$0.6929
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK (Alt: SIHU6N62E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.5529
  • 500:€0.5599
  • 100:€0.5699
  • 50:€0.5779
  • 25:€0.6539
  • 10:€0.8069
  • 1:€1.1249
SIHU6N62E-GE3
DISTI # 78-SIHU6N62E-GE3		Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2995
  • 1:$1.6600
  • 10:$1.3700
  • 100:$1.0500
  • 500:$0.9050
  • 1000:$0.7150
  • 2500:$0.6670
  • 5000:$0.6340
  • 10000:$0.6100
SIHU6N62E-GE3Vishay Siliconix 2775
    SIHU6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant    		Americas -
      Bild Teil # Beschreibung
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3

      		 MOSFET 800V Vds 30V Vgs IPAK (TO-251)
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3

      		 MOSFET 620V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3

      		 MOSFET 650V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
      SIHU6N62E

      Mfr.#: SIHU6N62E

      OMO.#: OMO-SIHU6N62E-1190

      		 Neu und Original
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3-VISHAY

      		 MOSFET N-CHAN 800V TO-251
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SIHU6N62E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,91 $
      0,91 $
      10
      0,87 $
      8,69 $
      100
      0,82 $
      82,34 $
      500
      0,78 $
      388,80 $
      1000
      0,73 $
      731,90 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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