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BSD316SNH6327XTSA1

BSD316SNH6327XTSA1
Mfr. #:
BSD316SNH6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET SMALL SIGNAL N-CH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSD316SNH6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSD316SNH6327XTSA1 DatasheetBSD316SNH6327XTSA1 Datasheet (P4-P6)BSD316SNH6327XTSA1 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
BSD316SNH6327XTSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
1.4 A
Rds On - Drain-Source-Widerstand:
120 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
600 pC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
500 mW (1/2 W)
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.9 mm
Länge:
2 mm
Serie:
BSD316
Transistortyp:
1 N-Channel
Breite:
1.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
2.3 S
Abfallzeit:
1 ns
Produktart:
MOSFET
Anstiegszeit:
2.3 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
5.8 ns
Typische Einschaltverzögerungszeit:
3.4 ns
Teil # Aliase:
BSD316SN H6327 SP000917668
Gewichtseinheit:
0.000265 oz
Tags
BSD316SNH, BSD316S, BSD316, BSD31, BSD3, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
***ment14 APAC
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Source Voltage Vds:30V; On Resistance
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 2 Series; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018)
***et Japan
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363
*** Source Electronics
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 1A SOT363
***ark
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:1A; Continuous Drain Current Id P Channel:1A RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363
***nell
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363
***(Formerly Allied Electronics)
MOSFET Dual N-Ch 30V 1A Enhanc. SOT363
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant: Yes
***ure Electronics
Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363
***et
Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R
*** Source Electronics
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363
***ment14 APAC
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:30V; On
***nell
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363
***ser
MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM
***Yang
Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel
***ponent Stockers USA
1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 1.8A SC88/SC70-6
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes
*** Source Electronics
Trans MOSFET N/P-CH 30V 0.7A/0.4A 6-Pin SC-70 T/R / MOSFET N/P-CH 30V SOT363
***roFlash
Small Signal Field-Effect Transistor, 0.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:340mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.323ohm; Power Dissipation Pd:340mW
***(Formerly Allied Electronics)
Si1416EDH-T1-GE3 N-channel MOSFET Transistor; 3.9 A; 30 V; 6-Pin SOT-363
***ure Electronics
SI1416EDH Series N-Channel 30 V 3.9 A 12 nC Surface Mount Mosfet - SC-70-6
***nell
MOSFET, N-CH, 30V, 3.9A, SOT-363-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.8W; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSD316SNH6327XTSA1
DISTI # 31053880		Infineon Technologies AGTrans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		6000
  • 99000:$0.0576
  • 45000:$0.0595
  • 24000:$0.0662
  • 9000:$0.0710
  • 3000:$0.0778
BSD316SNH6327XTSA1
DISTI # BSD316SNH6327XTSA1-ND		Infineon Technologies AGMOSFET N-CH 30V 1.4A SOT363
RoHS: Compliant
Min Qty: 9000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 9000:$0.0888
BSD316SNH6327XTSA1
DISTI # C1S322000396401		Infineon Technologies AGTrans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		6000
  • 6000:$0.0738
  • 3000:$0.0804
BSD316SNH6327XTSA1
DISTI # BSD316SNH6327XTSA1		Infineon Technologies AGTrans MOSFET N-CH 30V 1.4A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD316SNH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel		Americas - 0
  • 9000:$0.0548
  • 15000:$0.0528
  • 24000:$0.0509
  • 45000:$0.0492
  • 90000:$0.0483
BSD316SNH6327XTSA1
DISTI # 49AC0108		Infineon Technologies AGMOSFET, N-CH, AUTO, 30V, 1.4A, SOT363,Transistor Polarity:N Channel,Continuous Drain Current Id:1.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes21904
  • 1:$0.3900
  • 10:$0.2700
  • 25:$0.2210
  • 50:$0.1730
  • 100:$0.1240
  • 250:$0.1140
  • 500:$0.1050
  • 1000:$0.0950
BSD316SN H6327
DISTI # 726-BSD316SNH6327		Infineon Technologies AGMOSFET SMALL SIGNAL N-CH
RoHS: Compliant		2812
  • 1:$0.3900
  • 10:$0.2500
  • 100:$0.1070
  • 1000:$0.0830
BSD316SNH6327XTSA1
DISTI # 726-BSD316SNH6327XTS		Infineon Technologies AGMOSFET SMALL SIGNAL N-CH
RoHS: Compliant		8675
  • 1:$0.3900
  • 10:$0.2700
  • 100:$0.1240
  • 1000:$0.0950
  • 3000:$0.0810
BSD316SNH6327XTSA1
DISTI # 2839433		Infineon Technologies AGMOSFET, N-CH, AUTO, 30V, 1.4A, SOT363
RoHS: Compliant		21904
  • 5:£0.2340
  • 25:£0.2250
  • 100:£0.0983
  • 250:£0.0930
  • 500:£0.0770
BSD316SNH6327XTSA1
DISTI # 2839433		Infineon Technologies AGMOSFET, N-CH, AUTO, 30V, 1.4A, SOT363
RoHS: Compliant		21905
  • 5:$0.4650
  • 25:$0.3480
  • 100:$0.2230
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von BSD316SNH6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,38 $
0,38 $
10
0,27 $
2,70 $
100
0,12 $
12,40 $
1000
0,10 $
95,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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