PartNumber | BSD314SPEH6327XTSA1 | BSD316SN H6327 | BSD314SPEL6327HTSA1 |
Description | MOSFET P-Ch 30V -1.5A SOT-363-3 | MOSFET SMALL SIGNAL N-CH | MOSFET P-CH 30V 1.5A SOT363 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-363-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 1.5 A | 1.4 A | - |
Rds On Drain Source Resistance | 230 mOhms | 120 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | - 700 pC | 600 pC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 0.9 mm | 0.9 mm | - |
Length | 2 mm | 2 mm | - |
Series | BSD314 | BSD316 | - |
Transistor Type | 1 P-Channel | 1 N-Channel | - |
Width | 1.25 mm | 1.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 3 S | 2.3 S | - |
Fall Time | 2.8 ns | 1 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.9 ns | 2.3 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 12.4 ns | 5.8 ns | - |
Typical Turn On Delay Time | 5.1 ns | 3.4 ns | - |
Part # Aliases | BSD314SPE BSD314SPEH6327XT H6327 SP000917658 | BSD316SNH6327XTSA1 SP000917668 | - |
Unit Weight | 0.000265 oz | 0.000265 oz | - |