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IPD135N03LGATMA1

IPD135N03LGATMA1
Mfr. #:
IPD135N03LGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 30A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD135N03LGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
13.5 mOhms
Aufbau:
Single
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
G IPD135N03L IPD135N3LGXT SP000796912
Gewichtseinheit:
0.139332 oz
Tags
IPD135N03LG, IPD135N03L, IPD135N03, IPD135, IPD13, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 13.5 mOhm 6.4 nC OptiMOS™ Power Mosfet - TO-252-3
***p One Stop Japan
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
***ical
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK
***et
Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R
***Components
MOSFET N-Channel 30V 30A OptiMOS3 TO252
***an P&S
30V,30A,N Channel Power MOSFET
***ark
MOSFET, N CHANNEL, 30V, 30A, TO-252
***i-Key
MOSFET N-CH 30V 35A TO252-3
***ronik
N-CH 30V 30A 14mOhm TO252-3 RoHSconf
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 30A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:31W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:30A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***nell
MOSFET, CANALE N, 30A, 30V, PG-TO252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0113ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:31W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:30A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:20V; Tipo di Transistor:Power MOSFET
Teil # Mfg. Beschreibung Aktie Preis
IPD135N03LGATMA1
DISTI # V72:2272_06391086		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		743
  • 500:$0.3279
  • 250:$0.3305
  • 100:$0.3646
  • 25:$0.5550
  • 10:$0.6183
  • 1:$0.7395
IPD135N03LGATMA1
DISTI # V36:1790_06391086		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.2127
  • 1250000:$0.2130
  • 250000:$0.2345
  • 25000:$0.2718
  • 2500:$0.2780
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6819In Stock
  • 1000:$0.3160
  • 500:$0.3950
  • 100:$0.4996
  • 10:$0.6520
  • 1:$0.7400
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6819In Stock
  • 1000:$0.3160
  • 500:$0.3950
  • 100:$0.4996
  • 10:$0.6520
  • 1:$0.7400
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.2429
  • 12500:$0.2492
  • 5000:$0.2588
  • 2500:$0.2780
IPD135N03LGATMA1
DISTI # 33651457		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		743
  • 25:$0.7395
IPD135N03LGATMA1
DISTI # SP000796912		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R (Alt: SP000796912)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2119
  • 15000:€0.2289
  • 10000:€0.2479
  • 5000:€0.2699
  • 2500:€0.3309
IPD135N03LGXT
DISTI # IPD135N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD135N03LGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2319
  • 15000:$0.2359
  • 10000:$0.2439
  • 5000:$0.2529
  • 2500:$0.2629
IPD135N03LGATMA1
DISTI # 50Y2027		Infineon Technologies AGMOSFET Transistor, N Channel, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V RoHS Compliant: Yes1195
  • 1000:$0.2960
  • 500:$0.3210
  • 250:$0.3450
  • 100:$0.3700
  • 50:$0.4370
  • 25:$0.5050
  • 10:$0.5730
  • 1:$0.6870
IPD135N03LGATMA1
DISTI # 726-IPD135N03LGATMA1		Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2
RoHS: Compliant		8485
  • 1:$0.6800
  • 10:$0.5670
  • 100:$0.3660
  • 1000:$0.2930
  • 2500:$0.2470
  • 10000:$0.2380
  • 25000:$0.2290
IPD135N03LGATMA1
DISTI # IPD135N03LGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,21A,31W,PG-TO252-32500
  • 500:$0.2703
  • 100:$0.2905
  • 25:$0.3345
  • 5:$0.3784
  • 1:$0.5608
IPD135N03LGATMA1
DISTI # 2480822		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-31835
  • 500:£0.2240
  • 250:£0.2550
  • 100:£0.2860
  • 10:£0.4880
  • 1:£0.6060
IPD135N03LGATMA1
DISTI # 2480822RL		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
RoHS: Compliant		0
  • 1000:$0.4770
  • 500:$0.5960
  • 100:$0.7530
  • 10:$0.9830
  • 1:$1.1200
IPD135N03LGATMA1
DISTI # 2480822		Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
RoHS: Compliant		1485
  • 1000:$0.4770
  • 500:$0.5960
  • 100:$0.7530
  • 10:$0.9830
  • 1:$1.1200
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von IPD135N03LGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,68 $
0,68 $
10
0,57 $
5,67 $
100
0,37 $
36,60 $
1000
0,29 $
293,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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