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FDMC15N06

FDMC15N06
Mfr. #:
FDMC15N06
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET UltraFET 55V, 15A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC15N06 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
15 A
Rds On - Drain-Source-Widerstand:
75 mOhms
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
35 W
Aufbau:
Single
Handelsname:
UltraFET
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC15N06
Transistortyp:
1 N-Channel
Typ:
N-Kanal-MOSFET
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
5 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
36.5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22.5 ns
Typische Einschaltverzögerungszeit:
9.5 ns
Gewichtseinheit:
0.007055 oz
Tags
FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel UltraFET Power MOSFET 55V, 15A, 90mΩ
***el Electronic
Memory 3 (168 Hours) Volatile Tape & Reel (TR) SRAM - Asynchronous 44-TSOP (0.400, 10.16mm Width) 4Mb 512K x 8 SRAM 0°C~70°C TA 3V~3.6V IC SRAM 4M PARALLEL 44TSOP II
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
***ure Electronics
Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 45
***ponent Stockers USA
19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ser
MOSFETs 19a, 55V N-Channel UltraFET
***et
PWR MOS ULTRAFET 55V/19A/0.070OHMS N-CHANNEL TO-252AA
***ponent Stockers USA
19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***i-Key
MOSFET N-CH 55V 19A DPAK
***ser
MOSFETs 19a, 55V N-Channel UltraFET
***Yang
PWR MOS ULTRAFET 55V/15A/0.090OHMS N-CHANNEL TO-252AA - Bulk
***i-Key Marketplace
MOSFET N-CH 55V 15A TO252AA
***ser
MOSFETs 15a, 55V N-Channel UltraFET
***el Nordic
Contact for details
Teil # Mfg. Beschreibung Aktie Preis
FDMC15N06
DISTI # 26637152		ON SemiconductorFET 55V 90.0 MOHM MLP336000
  • 3000:$0.5711
FDMC15N06
DISTI # FDMC15N06CT-ND		ON SemiconductorMOSFET N-CH 55V 2.4A MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMC15N06
    DISTI # FDMC15N06DKR-ND    		ON SemiconductorMOSFET N-CH 55V 2.4A MLP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMC15N06
      DISTI # FDMC15N06TR-ND      		ON SemiconductorMOSFET N-CH 55V 2.4A MLP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.6930
      FDMC15N06
      DISTI # V36:1790_06338153      		ON SemiconductorFET 55V 90.0 MOHM MLP330
        FDMC15N06
        DISTI # FDMC15N06        		ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC15N06)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 0
        • 3000:$0.5879
        • 6000:$0.5839
        • 12000:$0.5759
        • 18000:$0.5689
        • 30000:$0.5549
        FDMC15N06
        DISTI # FDMC15N06        		ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R - Bulk (Alt: FDMC15N06)
        RoHS: Not Compliant
        Min Qty: 500
        Container: Bulk        		Americas - 0
        • 500:$0.6789
        • 502:$0.6749
        • 1002:$0.6659
        • 2500:$0.6579
        • 5000:$0.6409
        FDMC15N06
        DISTI # FDMC15N06        		ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R (Alt: FDMC15N06)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel        		Europe - 0
        • 3000:€1.1849
        • 6000:€0.9219
        • 12000:€0.7649
        • 18000:€0.6449
        • 30000:€0.5979
        FDMC15N06
        DISTI # 64R3010        		ON SemiconductorFET 55V 90.0 MOHM MLP33 / REEL0
        • 30000:$0.5720
        • 18000:$0.5850
        • 12000:$0.6080
        • 6000:$0.6750
        • 3000:$0.7430
        • 1:$0.7740
        FDMC15N06
        DISTI # 512-FDMC15N06        		ON SemiconductorMOSFET UltraFET 55V, 15A
        RoHS: Compliant        		998
        • 1:$1.4800
        • 10:$1.2600
        • 100:$0.9680
        • 500:$0.8560
        • 1000:$0.6750
        • 3000:$0.5990
        • 9000:$0.5770
        FDMC15N06Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		19596
        • 1000:$0.6600
        • 500:$0.6900
        • 100:$0.7200
        • 25:$0.7500
        • 1:$0.8100
        FDMC15N06Fairchild Semiconductor Corporation 51000
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          Verfügbarkeit
          Aktie:
          998
          Auf Bestellung:
          2981
          Menge eingeben:
          Der aktuelle Preis von FDMC15N06 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,48 $
          1,48 $
          10
          1,26 $
          12,60 $
          100
          0,97 $
          96,80 $
          500
          0,86 $
          428,00 $
          1000
          0,68 $
          675,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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