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FDMC7664

FDMC7664
Mfr. #:
FDMC7664
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-Chan 30/20V PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC7664 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
18.8 A
Rds On - Drain-Source-Widerstand:
4.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC7664
Transistortyp:
1 N-Channel
Typ:
Power Trench MOSFET
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
115 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
37 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.005832 oz
Tags
FDMC766, FDMC76, FDMC7, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 30V, 18.8A, 4.2mΩ
***nell
MOSFET, N CH, 30V, 24A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
***roFlash
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.32V; Power Dissipation:2.5W Rohs Compliant: Yes |Infineon IRF7832TRPBF.
***emi
N-Channel PowerTrench® MOSFET 30V, 3.8mΩ
*** Stop Electro
Power Field-Effect Transistor, 105A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ure Electronics
N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,21A I(D),SO
***et
Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm;
***rchild Semiconductor
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***nell
MOSFET, N, SMD, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.5mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 106A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
***Yang
Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***roFlash
IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 18A, 4.8 MOHM, 17 NC QG, SO-8, Pb-Free | Infineon IRF8736PBF
***icontronic
Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Teil # Mfg. Beschreibung Aktie Preis
FDMC7664
DISTI # C1S541901390941		ON SemiconductorTrans MOSFET N-CH 30V 18.8A 8-Pin Power 33 T/R
RoHS: Compliant		3000
  • 3000:$0.6010
FDMC7664
DISTI # FDMC7664TR-ND		ON SemiconductorMOSFET N-CH 30V 8-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.5313
FDMC7664
DISTI # FDMC7664CT-ND		ON SemiconductorMOSFET N-CH 30V 8-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3000In Stock
  • 1000:$0.5863
  • 500:$0.7427
  • 100:$0.9577
  • 10:$1.2120
  • 1:$1.3700
FDMC7664
DISTI # FDMC7664DKR-ND		ON SemiconductorMOSFET N-CH 30V 8-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3000In Stock
  • 1000:$0.5863
  • 500:$0.7427
  • 100:$0.9577
  • 10:$1.2120
  • 1:$1.3700
FDMC7664
DISTI # FDMC7664		ON SemiconductorTrans MOSFET N-CH 30V 18.8A 8-Pin Power 33 T/R (Alt: FDMC7664)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.6659
  • 6000:€0.5449
  • 12000:€0.4999
  • 18000:€0.4609
  • 30000:€0.4279
FDMC7664
DISTI # FDMC7664		ON SemiconductorTrans MOSFET N-CH 30V 18.8A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7664)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4499
  • 6000:$0.4479
  • 12000:$0.4419
  • 18000:$0.4359
  • 30000:$0.4249
FDMC7664
DISTI # FDMC7664		ON SemiconductorTrans MOSFET N-CH 30V 18.8A 8-Pin Power 33 T/R (Alt: FDMC7664)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    FDMC7664
    DISTI # 64R3013    		ON SemiconductorPT7 NCH 30/20V MLP 3.3X3. / REEL0
    • 1:$0.4590
    • 9000:$0.4420
    • 24000:$0.4280
    FDMC7664
    DISTI # 512-FDMC7664    		ON SemiconductorMOSFET N-Chan 30/20V PowerTrench
    RoHS: Compliant    		3149
    • 1:$1.1400
    • 10:$0.9660
    • 100:$0.7420
    • 500:$0.6560
    • 1000:$0.5180
    • 3000:$0.4590
    FDMC7664Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18.8A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		8469
    • 1000:$0.5000
    • 500:$0.5300
    • 100:$0.5500
    • 25:$0.5700
    • 1:$0.6200
    FDMC7664Fairchild Semiconductor Corporation18.8 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET67
    • 20:$0.5400
    • 6:$0.8100
    • 1:$1.0800
    FDMC7664Fairchild Semiconductor Corporation18.8 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET80
    • 51:$0.7200
    • 11:$1.2000
    • 1:$2.4000
    FDMC7664Fairchild Semiconductor Corporation 3000
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von FDMC7664 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,13 $
      1,13 $
      10
      0,97 $
      9,66 $
      100
      0,74 $
      74,20 $
      500
      0,66 $
      328,00 $
      1000
      0,52 $
      518,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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