FQA11N90C-F109

Mfr. #:: FQA11N90C-F109
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: MOSFET 900V N-Ch Q-FET advance C-Series
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FQA11N90C-F109 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-3PN-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 900 V

Id - Kontinuierlicher Drainstrom:: 11 A

Rds On - Drain-Source-Widerstand:: 1.4 Ohms

Vgs - Gate-Source-Spannung:: 30 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 300 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: QFET

Verpackung:: Rohr

Höhe:: 20.1 mm

Länge:: 16.2 mm

Serie:: FQA11N90C_F109

Transistortyp:: 1 N-Channel

Breite:: 5 mm

Marke:: ON Semiconductor / Fairchild

Abfallzeit:: 85 ns

Produktart:: MOSFET

Anstiegszeit:: 130 ns

Werkspackungsmenge:: 450

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 130 ns

Typische Einschaltverzögerungszeit:: 60 ns

Teil # Aliase:: FQA11N90C_F109

Gewichtseinheit:: 0.225789 oz

Tags: FQA11N90C-F, FQA11N90C, FQA11N, FQA11, FQA1, FQA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQA11N90C-F109 Beschreibung

***ark: MOSFET Transistor, N Channel, 11 A, 900 V, 0.91 ohm, 10 V, 5 V

***Components: N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-3PN ON Semiconductor FQA11N90C-F109

***Semiconductor: N-Channel Power MOSFET, QFET®, 900 V, 11.0 A, 1.1 Ω, TO-3P

***et Europe: Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail

***p One Stop Global: Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3PN Tube

***ure Electronics: N-Channel 900 V 1.1 Ohm Through Hole Mosfet - TO-3P

***an P&S: 900V,1.1Ω,11.0A,N-Ch QFET MOSFET

***inecomponents.com: 900V N-Channel MOSFET

***i-Key: MOSFET N-CH 900V 11A TO-3P

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 900V, 11A, TO-3PN-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.91ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:300W; Transistor Case Style:TO-3PN; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CANALE N, 900V, 11A, TO-3PN-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11A; Tensione Drain Source Vds:900V; Resistenza di Attivazione Rds(on):0.91ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-3PN; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FQA11N90C_F109 DISTI # 33111446	ON Semiconductor	900V N-CHANNEL MOSFET QFET&#17	805	500:$1.5485 250:$1.5910 100:$1.6358 50:$1.6832 25:$1.7334 7:$1.7868
FQA11N90C_F109 DISTI # V36:1790_06359081	ON Semiconductor	900V N-CHANNEL MOSFET QFET&#17	0	450000:$1.5820 225000:$1.5870 45000:$2.1510 4500:$3.2820 450:$3.4790
FQA11N90C_F109 DISTI # FQA11N90C-F109	ON Semiconductor	Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA11N90C-F109) RoHS: Compliant Min Qty: 450	Asia - 450	22500:$1.7577 11250:$1.7875 4500:$1.8183 2250:$1.8832 1350:$1.9530 900:$2.0281 450:$2.1092
FQA11N90C_F109 DISTI # FQA11N90C-F109	ON Semiconductor	Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA11N90C-F109) RoHS: Compliant Min Qty: 1	Europe - 300	1000:€1.2900 500:€1.3900 100:€1.4900 25:€1.5900 50:€1.5900 10:€1.6900 1:€1.8900
FQA11N90C_F109 DISTI # FQA11N90C-F109	ON Semiconductor	Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FQA11N90C-F109) Min Qty: 149 Container: Bulk	Americas - 0	1490:$1.9900 149:$2.0900 298:$2.0900 447:$2.0900 745:$2.0900
FQA11N90C_F109 DISTI # FQA11N90C-F109	ON Semiconductor	Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA11N90C-F109) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	900:$1.5900 1800:$1.5900 2700:$1.5900 4500:$1.5900 450:$1.6900
FQA11N90C-F109 DISTI # 48AC1154	ON Semiconductor	QFC 900V 1.1OHM TO3PN / TUBE	0	1000:$2.7000 500:$2.8700 250:$3.0800 100:$3.3400 1:$4.0600
FQA11N90C-F109 DISTI # 512-FQA11N90C_F109	ON Semiconductor	MOSFET 900V N-Ch Q-FET advance C-Series RoHS: Compliant	569	1:$3.9300 10:$3.3400 100:$2.9000 250:$2.7500 500:$2.4700
FQA11N90C-F109	ON Semiconductor	Power Field-Effect Transistor, 11A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	900	1000:$1.9100 500:$2.0100 100:$2.0900 25:$2.1800 1:$2.3500
FQA11N90C-F109	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	300	1000:$1.9100 500:$2.0100 100:$2.0900 25:$2.1800 1:$2.3500
FQA11N90C-F109 DISTI # 6714890	ON Semiconductor	MOSFET N-CHANNEL 900V 11A TO-3P(N), EA	66	15:£2.4600 6:£2.5100 1:£3.8500
FQA11N90C_F109 DISTI # FQA11N90C-F109	ON Semiconductor	Transistor: N-MOSFET,unipolar,900V,6.9A,300W,TO3PN	120	30:$2.3700 10:$2.6400 3:$3.2900 1:$3.8100
FQA11N90C-F109	ON Semiconductor	900V,1.1,11.0A,N-Ch QFET MOSFET	450	1:$5.0300 100:$3.2100 500:$2.6500 1000:$2.4400
FQA11N90C-F109 DISTI # 2453882	ON Semiconductor	MOSFET, N-CH, 900V, 11A, TO-3PN-3 RoHS: Compliant	0	500:$3.8000 250:$4.2300 100:$4.4600 10:$5.1400 1:$6.0400
FQA11N90C-F109 DISTI # XSKDRABV0037738	ON SEMICONDUCTOR	RoHS: Compliant	360 in Stock0 on Order	360:$2.2400 208:$2.4000
FQA11N90C-F109 DISTI # XSFP00000101402	Fairchild Semiconductor Corporation	LowSkewClockDriver,2DLSeries,4TrueOutput(s),0InvertedOutput(s),PDSO20 RoHS: Compliant	120 in Stock0 on Order	120:$2.4000 60:$2.5700

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Verfügbarkeit

Aktie:: 235
Auf Bestellung:: 2218
Menge eingeben:

Der aktuelle Preis von FQA11N90C-F109 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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FQA11N90C-F109

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes