OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

FQA11

FQA11N90-F109 vs FQA111N90C vs FQA11N90C FQA9N90C

 
PartNumberFQA11N90-F109FQA111N90CFQA11N90C FQA9N90C
DescriptionMOSFET 900V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current11.4 A--
Rds On Drain Source Resistance960 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
SeriesFQA11N90_F109--
Transistor Type1 N-Channel--
Width5 mm--
BrandON Semiconductor / Fairchild--
Fall Time90 ns--
Product TypeMOSFET--
Rise Time135 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time165 ns--
Typical Turn On Delay Time65 ns--
Part # AliasesFQA11N90_F109--
Unit Weight0.225789 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FQA11N90-F109 MOSFET 900V N-Channel QFET
FQA11N90C-F109 MOSFET 900V N-Ch Q-FET advance C-Series
FQA111N90C Neu und Original
FQA11N90C FQA9N90C Neu und Original
FQA11N90C,11N90C, Neu und Original
FQA11N90C-L Neu und Original
FQA11N90_F109 Darlington Transistors MOSFET 900V N-Channel QFET
FQA11N90C_F109 Darlington Transistors MOSFET 900V N-Ch Q-FET advance C-Series
FQA11N90C_F109-- Neu und Original
FQA11N90CTSA11N90 Neu und Original
ON Semiconductor
ON Semiconductor 		FQA11N90 MOSFET N-CH 900V 11.4A TO-3P
FQA11N90-F109 MOSFET N-CH 900V 11.4A TO-3P
FQA11N90C MOSFET N-CH 900V 11A TO-3P
FQA11N90C-F109 MOSFET N-CH 900V 11A TO-3P
Top