HGTP12N60A4

HGTP12N60A4
Mfr. #:
HGTP12N60A4
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP12N60A4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTP12N60A4 DatasheetHGTP12N60A4 Datasheet (P4-P6)HGTP12N60A4 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
54 A
Pd - Verlustleistung:
167 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
54 A
Höhe:
9.65 mm
Länge:
10.67 mm
Breite:
4.83 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
54 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
IGBTs
Teil # Aliase:
HGTP12N60A4_NL
Gewichtseinheit:
0.211644 oz
Tags
HGTP12N60A, HGTP12, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBTs 600V N-Channel IGBT SMPS Series
***i-Key
IGBT 600V 54A 167W TO220AB
***inecomponents.com
600V SMPS Series N-Channel IGBT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:18ns; Time, Rise:8ns; Transistors, No. of:1
Teil # Mfg. Beschreibung Aktie Preis
HGTP12N60A4D
DISTI # V79:2366_23246385
ON SemiconductorPT P TO220 12A 600V SMPS740
  • 1600:$1.4266
  • 800:$1.6703
  • 100:$2.0614
  • 10:$2.5014
  • 1:$3.1309
HGTP12N60A4D
DISTI # V36:1790_06359709
ON SemiconductorPT P TO220 12A 600V SMPS0
  • 800000:$0.9099
  • 400000:$0.9140
  • 80000:$1.4310
  • 8000:$2.4530
  • 800:$2.6300
HGTP12N60A4D
DISTI # HGTP12N60A4D-ND
ON SemiconductorIGBT 600V 54A 167W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
517In Stock
  • 5600:$1.1900
  • 3200:$1.2049
  • 800:$1.5619
  • 100:$1.9010
  • 25:$2.2312
  • 10:$2.3650
  • 1:$2.6300
HGTP12N60A4
DISTI # HGTP12N60A4-ND
ON SemiconductorIGBT 600V 54A 167W TO220AB
RoHS: Compliant
Min Qty: 400
Container: Tube
Limited Supply - Call
    HGTP12N60A4D
    DISTI # 32380143
    ON SemiconductorPT P TO220 12A 600V SMPS740
    • 6:$3.1309
    HGTP12N60A4D
    DISTI # 32825695
    ON SemiconductorPT P TO220 12A 600V SMPS200
    • 11:$0.9861
    HGTP12N60A4D
    DISTI # HGTP12N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 1
    Europe - 200
    • 1000:€1.0229
    • 500:€1.0609
    • 100:€1.1019
    • 50:€1.1459
    • 25:€1.1939
    • 10:€1.3019
    • 1:€1.4329
    HGTP12N60A4D
    DISTI # HGTP12N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 188
    Container: Bulk
    Americas - 0
    • 940:$1.5900
    • 1880:$1.5900
    • 188:$1.6900
    • 376:$1.6900
    • 564:$1.6900
    HGTP12N60A4D
    DISTI # HGTP12N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube
    Americas - 0
    • 8000:$0.9259
    • 4800:$0.9499
    • 3200:$0.9619
    • 1600:$0.9739
    • 800:$0.9809
    HGTP12N60A4D
    DISTI # 05M3595
    ON SemiconductorIGBT Single Transistor, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes1888
    • 5000:$1.2300
    • 2500:$1.2700
    • 1000:$1.5600
    • 500:$1.7400
    • 100:$1.8800
    • 10:$2.3500
    • 1:$2.7600
    HGTP12N60A4
    DISTI # 512-HGTP12N60A4
    ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
    RoHS: Compliant
    0
      HGTP12N60A4D
      DISTI # 512-HGTP12N60A4D
      ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
      RoHS: Compliant
      0
        HGTP12N60A4Fairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
        RoHS: Compliant
        679
        • 1000:$0.6600
        • 500:$0.6900
        • 100:$0.7200
        • 25:$0.7500
        • 1:$0.8100
        HGTP12N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant
        92185
        • 1000:$1.0900
        • 500:$1.1500
        • 100:$1.2000
        • 25:$1.2500
        • 1:$1.3400
        HGTP12N60A4Harris SemiconductorInsulated Gate Bipolar Transistor
        RoHS: Compliant
        900
        • 1000:$1.3600
        • 500:$1.4300
        • 100:$1.4900
        • 25:$1.5500
        • 1:$1.6700
        HGTP12N60A4DFairchild Semiconductor Corporation 54
          HGTP12N60A4D
          DISTI # HGTP12N60A4D
          ON SemiconductorTransistor: IGBT,600V,23A,167W,TO220-3708
          • 500:$1.2300
          • 100:$1.3200
          • 25:$1.4600
          • 5:$1.8200
          • 1:$2.1300
          HGTP12N60A4DFairchild Semiconductor Corporation 
          RoHS: Not Compliant
          800
            HGTP12N60A4D
            DISTI # 1057676
            ON SemiconductorIGBT, TO-220
            RoHS: Compliant
            1878
            • 1600:$2.2100
            • 800:$2.6700
            • 100:$3.2500
            • 10:$4.0300
            • 1:$4.4900
            HGTP12N60A4D
            DISTI # 1057676
            ON SemiconductorIGBT, TO-2202644
            • 500:£1.4000
            • 250:£1.5500
            • 100:£1.7000
            • 10:£2.1200
            • 1:£2.6600
            Bild Teil # Beschreibung
            MGJ2D051509SC

            Mfr.#: MGJ2D051509SC

            OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

            Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4500
            Menge eingeben:
            Der aktuelle Preis von HGTP12N60A4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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