 |  |  | |
| PartNumber | HGTP12N60A4 | HGTP12N60A4D | HGTP12N60A4D 12N60A4D |
| Description | IGBT Transistors 600V N-Channel IGBT SMPS Series | IGBT 600V 54A 167W TO220AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 54 A | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 54 A | - | - |
| Height | 9.65 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 54 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTP12N60A4_NL | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTP12N60A4 | IGBT Transistors 600V N-Channel IGBT SMPS Series | |
ON Semiconductor |
HGTP12N60A4 | IGBT 600V 54A 167W TO220AB | |
| HGTP12N60A4D | IGBT 600V 54A 167W TO220AB | ||
| HGTP12N60A4D(PRFMD) | Neu und Original | ||
| HGTP12N60A4D? | PT P TO220 12A 600V SMPS | ||
| HGTP12N60A4D 12N60A4D | Neu und Original |