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FDB86102LZ

FDB86102LZ
Mfr. #:
FDB86102LZ
Hersteller:
ON Semiconductor
Beschreibung:
Darlington Transistors MOSFET 100V NCHAN PwrTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDB86102LZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
FDB86102LZ Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
FAIRCHILD
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Gewichtseinheit
0.046296 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3.1 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
ID-Dauer-Drain-Strom
8.3 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
24 mOhms
Transistor-Polarität
N-Kanal
Tags
FDB86, FDB8, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 8.3A 3-Pin(2+Tab) D2PAK T/R
***Semiconductor
N-Channel PowerTrench® MOSFET, 100V, 30A, 24mΩ
***Components
MOSFET N-CHANNEL 100V 8.3A D2PAK
***i-Key
MOSFET N-CH 100V 30A D2PAK
***ark
MOSFET, N CH, 100V, 30A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; No. of Pins:3 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
***ment14 APAC
MOSFET, N CH, 100V, 30A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDB86102LZ
DISTI # V72:2272_06337738		ON SemiconductorPT5 100V/20V N-CHANNEL POWERTR1600
  • 1000:$0.6390
  • 500:$0.8078
  • 250:$0.9162
  • 100:$0.9259
  • 25:$1.1943
  • 10:$1.2074
  • 1:$1.4081
FDB86102LZ
DISTI # FDB86102LZCT-ND		ON SemiconductorMOSFET N-CH 100V 30A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		692In Stock
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDB86102LZ
DISTI # FDB86102LZDKR-ND		ON SemiconductorMOSFET N-CH 100V 30A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		692In Stock
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDB86102LZ
DISTI # FDB86102LZTR-ND		ON SemiconductorMOSFET N-CH 100V 30A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$0.8400
FDB86102LZ
DISTI # 30316637		ON SemiconductorPT5 100V/20V N-CHANNEL POWERTR1600
  • 1000:$0.6390
  • 500:$0.8078
  • 250:$0.9162
  • 100:$0.9259
  • 25:$1.1943
  • 11:$1.2074
FDB86102LZ
DISTI # 24565805		ON SemiconductorPT5 100V/20V N-CHANNEL POWERTR800
  • 800:$0.6624
FDB86102LZ
DISTI # FDB86102LZ		ON SemiconductorTrans MOSFET N-CH 100V 8.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB86102LZ)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.6009
  • 1600:$0.5969
  • 3200:$0.5889
  • 4800:$0.5819
  • 8000:$0.5669
FDB86102LZ
DISTI # 54T8315		ON SemiconductorFET 100V 24.0 MOHM D2PAK / REEL0
  • 1:$0.6980
  • 800:$0.6940
  • 2400:$0.6340
  • 9600:$0.6150
FDB86102LZ
DISTI # 512-FDB86102LZ		ON SemiconductorMOSFET 100V NCHAN PwrTrench
RoHS: Compliant		1260
  • 1:$1.5100
  • 10:$1.2900
  • 100:$0.9900
  • 500:$0.8750
  • 800:$0.6900
FDB86102LZ
DISTI # 7599469P		ON SemiconductorMOSFET N-CHANNEL 100V 8.3A D2PAK, RL38
  • 20:£0.8200
  • 40:£0.7250
  • 100:£0.6300
  • 500:£0.5700
FDB86102LZFairchild Semiconductor Corporation 800
    FDB86102LZ
    DISTI # 2083230    		ON SemiconductorMOSFET, N CH, 100V, 30A, TO-263
    RoHS: Compliant    		0
    • 5:£0.7200
    • 25:£0.6540
    • 100:£0.4990
    • 250:£0.4260
    • 500:£0.4250
    FDB86102LZ
    DISTI # C1S541901590541    		ON SemiconductorTrans MOSFET N-CH Si 100V 8.3A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1600
    • 250:$0.9162
    • 100:$0.9259
    • 25:$1.1943
    • 10:$1.2074
    FDB86102LZ
    DISTI # C1S541901539674    		ON SemiconductorTrans MOSFET N-CH Si 100V 8.3A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		800
    • 800:$1.0500
    Bild Teil # Beschreibung
    FDB86360-F085

    Mfr.#: FDB86360-F085

    OMO.#: OMO-FDB86360-F085

    		 MOSFET N-Channel Power Trench MOSFET
    FDB86102LZ

    Mfr.#: FDB86102LZ

    OMO.#: OMO-FDB86102LZ

    		 MOSFET 100V NCHAN PwrTrench
    FDB86363-F085

    Mfr.#: FDB86363-F085

    OMO.#: OMO-FDB86363-F085

    		 MOSFET N-Channel Power Trench MOSFET
    FDB86566-F085

    Mfr.#: FDB86566-F085

    OMO.#: OMO-FDB86566-F085

    		 MOSFET 60V N-channel LL PowerTrench MOSFET
    FDB86360

    Mfr.#: FDB86360

    OMO.#: OMO-FDB86360-1190

    		 Neu und Original
    FDB86566-F085

    Mfr.#: FDB86566-F085

    OMO.#: OMO-FDB86566-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 110A D2PAK
    FDB86566_F085

    Mfr.#: FDB86566_F085

    OMO.#: OMO-FDB86566-F085-1190

    		 MV7 60V N-channel Logic Level PowerTrench MOSFET (Alt: FDB86566-F085)
    FDB86360-F085-CUT TAPE

    Mfr.#: FDB86360-F085-CUT TAPE

    OMO.#: OMO-FDB86360-F085-CUT-TAPE-1190

    		 Neu und Original
    FDB86363-F085

    Mfr.#: FDB86363-F085

    OMO.#: OMO-FDB86363-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 80V 110A TO263
    FDB86360-F085

    Mfr.#: FDB86360-F085

    OMO.#: OMO-FDB86360-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 80V 110A TO263
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von FDB86102LZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,85 $
    0,85 $
    10
    0,81 $
    8,08 $
    100
    0,77 $
    76,53 $
    500
    0,72 $
    361,40 $
    1000
    0,68 $
    680,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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