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IPD70R600P7SAUMA1

IPD70R600P7SAUMA1
Mfr. #:
IPD70R600P7SAUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD70R600P7SAUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD70R600P7SAUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
700 V
Id - Kontinuierlicher Drainstrom:
8.5 A
Rds On - Drain-Source-Widerstand:
490 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
10.5 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
43.1 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
23 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
5.5 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
63 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPD70R600P7S SP001491636
Gewichtseinheit:
0.011993 oz
Tags
IPD70R600P, IPD70R6, IPD70R, IPD70, IPD7, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 700V, 8.5A, 150Deg C/43.1W; Transistor Polarity:n Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:8.5A; On Resistance Rds(On):0.49Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Developed to serve todays and especially tomorrows trends in flyback topologies the new 700V CoolMOS P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS P7 enables best fit for target applications in terms of: | Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
700V CoolMOS™ P7 MOSFETs
Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Teil # Mfg. Beschreibung Aktie Preis
IPD70R600P7SAUMA1
DISTI # V72:2272_16668136		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
  • 500:$0.3545
  • 250:$0.3938
  • 100:$0.4084
  • 25:$0.6002
  • 10:$0.6016
  • 1:$0.7022
IPD70R600P7SAUMA1
DISTI # V36:1790_16668136		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R0
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 2500:$0.3841
    IPD70R600P7SAUMA1
    DISTI # 30281696    		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R2500
    • 2500:$0.2640
    IPD70R600P7SAUMA1
    DISTI # 27460734    		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
    • 500:$0.3811
    • 250:$0.4233
    • 100:$0.4390
    • 25:$0.6452
    • 24:$0.6467
    IPD70R600P7SAUMA1
    DISTI # SP001491636    		Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: SP001491636)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 50
    • 2500:€0.3979
    • 5000:€0.3249
    • 10000:€0.2979
    • 15000:€0.2749
    • 25000:€0.2559
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1    		Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET - Tape and Reel (Alt: IPD70R600P7SAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.3099
    • 5000:$0.2979
    • 10000:$0.2879
    • 15000:$0.2779
    • 25000:$0.2729
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7S    		Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: IPD70R600P7S)
    RoHS: Compliant
    Min Qty: 2500    		Asia - 0
      IPD70R600P7SAUMA1
      DISTI # 16AC3358      		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2863
      • 1000:$0.3450
      • 500:$0.3740
      • 250:$0.4020
      • 100:$0.4310
      • 50:$0.5100
      • 25:$0.5890
      • 10:$0.6680
      • 1:$0.8000
      IPD70R600P7SAUMA1
      DISTI # 726-IPD70R600P7AUMA1      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		4722
      • 1:$0.8000
      • 10:$0.6680
      • 100:$0.4310
      • 1000:$0.3450
      IPD70R600P7SAUMA1
      DISTI # 2750412      		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant      		2863
      • 100:£0.4150
      • 25:£0.6580
      • 5:£0.7230
      IPD70R600P7SAUMA1
      DISTI # 2750412      		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant      		2863
      • 1000:$0.5800
      • 500:$0.7250
      • 100:$0.9780
      • 10:$1.2700
      • 1:$1.4600
      Bild Teil # Beschreibung
      IPD95R1K2P7ATMA1

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      IPD95R750P7ATMA1

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      IPB60R080P7ATMA1

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      		 MOSFET HIGH POWER_NEW
      IPN70R2K0P7SATMA1

      Mfr.#: IPN70R2K0P7SATMA1

      OMO.#: OMO-IPN70R2K0P7SATMA1

      		 MOSFET CONSUMER
      IPU95R1K2P7AKMA1

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      OMO.#: OMO-IPU95R1K2P7AKMA1

      		 MOSFET 950 V CoolMOS P7
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      Mfr.#: ES1JFL

      OMO.#: OMO-ES1JFL

      		 Rectifiers 600V 1A Super Fast Rectifier
      IPD70R900P7SAUMA1

      Mfr.#: IPD70R900P7SAUMA1

      OMO.#: OMO-IPD70R900P7SAUMA1

      		 MOSFET
      BAT54CHMFHT116

      Mfr.#: BAT54CHMFHT116

      OMO.#: OMO-BAT54CHMFHT116

      		 Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
      IPU95R750P7AKMA1

      Mfr.#: IPU95R750P7AKMA1

      OMO.#: OMO-IPU95R750P7AKMA1

      		 MOSFET 950 V CoolMOS P7
      IPB60R080P7ATMA1

      Mfr.#: IPB60R080P7ATMA1

      OMO.#: OMO-IPB60R080P7ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH TO263-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von IPD70R600P7SAUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,80 $
      0,80 $
      10
      0,67 $
      6,68 $
      100
      0,43 $
      43,10 $
      1000
      0,34 $
      345,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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