IPD30N10S3L34ATMA1

Mfr. #:: IPD30N10S3L34ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD30N10S3L34ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPD30N10S3L34ATMA1 Datasheet IPD30N10S3L34ATMA1 Datasheet (P4-P6)IPD30N10S3L34ATMA1 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: IPD30N10S3L34ATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 30 A

Rds On - Drain-Source-Widerstand:: 31 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.2 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 24 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 57 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Qualifikation:: AEC-Q101

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Serie:: XPD30N10

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon-Technologien

Abfallzeit:: 3 ns

Produktart:: MOSFET

Anstiegszeit:: 4 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 18 ns

Typische Einschaltverzögerungszeit:: 6 ns

Teil # Aliase:: IPD30N10S3L-34 IPD3N1S3L34XT SP000261248

Gewichtseinheit:: 0.139332 oz

Tags: IPD30N10, IPD30N1, IPD30N, IPD30, IPD3, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD30N10S3L34ATMA1 Beschreibung

***Components: On a Reel of 2500, N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK Infineon IPD30N10S3L34ATMA1

***ark: MOSFET Transistor, N Channel, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V

***ure Electronics: Single N-Channel 100 V 31 mOhm 31 nC OptiMOS Power Mosfet - TO-252-3

***p One Stop Japan: Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R

***ical: Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 100V 30A 3-Pin TO-252 T/R

***i-Key: MOSFET N-CH 100V 30A TO252-3

***ronik: N-CH 100V 30A 31mOhm TO252-3

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 100V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0258ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:57W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

***nell: MOSFET, CANALE N, 100V, 30A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0258ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPD30N10S3L34ATMA1 Mehr Informationen

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD30N10S3L34ATMA1 DISTI # V72:2272_06390917	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	75000:$0.3688 30000:$0.3726 15000:$0.3766 6000:$0.3805 3000:$0.3844 1000:$0.3882 500:$0.4915 250:$0.5622 100:$0.5734 50:$0.6639 25:$0.7376 10:$0.8189 1:$0.9480
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	28373In Stock	1000:$0.4344 500:$0.5503 100:$0.6661 10:$0.8540 1:$0.9600
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	28373In Stock	1000:$0.4344 500:$0.5503 100:$0.6661 10:$0.8540 1:$0.9600
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	27500In Stock	25000:$0.3562 12500:$0.3599 5000:$0.3740 2500:$0.3937
IPD30N10S3L34ATMA1 DISTI # 33119879	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	15000:$0.3766 6000:$0.3805 3000:$0.3844 1000:$0.3882 500:$0.4915 250:$0.5622 100:$0.5734 50:$0.6639 25:$0.7376 17:$0.8189
IPD30N10S3L34ATMA1 DISTI # SP000261248	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000261248) RoHS: Compliant Min Qty: 2500	Europe - 26500	25000:€0.3879 15000:€0.4179 10000:€0.4649 5000:€0.5219 2500:€0.6159
IPD30N10S3L34ATMA1 DISTI # IPD30N10S3L34ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N10S3L34ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3399 15000:$0.3459 10000:$0.3579 5000:$0.3709 2500:$0.3849
IPD30N10S3L34ATMA1 DISTI # 79X1436	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0258ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	8676	1000:$0.4060 500:$0.5140 250:$0.5480 100:$0.5820 50:$0.6400 25:$0.6990 10:$0.7580 1:$0.8790
IPD30N10S3L-34 DISTI # 726-IPD30N10S3L34	Infineon Technologies AG	MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T RoHS: Compliant	52091	1:$0.8700 10:$0.7500 100:$0.5760 500:$0.5090 1000:$0.4020 2500:$0.3570 10000:$0.3430
IPD30N10S3L34ATMA1 DISTI # 726-IPD30N10S3L34ATM	Infineon Technologies AG	MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T RoHS: Compliant	23984	1:$0.8700 10:$0.7500 100:$0.5760 500:$0.5090 1000:$0.4020 2500:$0.3570 10000:$0.3430
IPD30N10S3L34ATMA1 DISTI # 7533018	Infineon Technologies AG	MOSFET N-CH 100V 30A OPTIMOS-T TO252, PK	890	1250:£0.2870 630:£0.3190 130:£0.3640 30:£0.4640 10:£0.6060
IPD30N10S3L34ATMA1 DISTI # 7533018P	Infineon Technologies AG	MOSFET N-CH 100V 30A OPTIMOS-T TO252, RL	10090	1250:£0.2870 630:£0.3190 130:£0.3640 30:£0.4640
IPD30N10S3L34ATMA1 DISTI # 2432729	Infineon Technologies AG	MOSFET, N CH, 100V, 30A, TO-252-3	7787	500:£0.3700 250:£0.3930 100:£0.4170 25:£0.5470 5:£0.6410
IPD30N10S3L34ATMA1 DISTI # 2432729RL	Infineon Technologies AG	MOSFET, N CH, 100V, 30A, TO-252-3 RoHS: Compliant	0	2500:$0.5490 1000:$0.6190 500:$0.7830 100:$0.8860 10:$1.1600 1:$1.3400
IPD30N10S3L34ATMA1 DISTI # 2432729	Infineon Technologies AG	MOSFET, N CH, 100V, 30A, TO-252-3 RoHS: Compliant	8282	2500:$0.5490 1000:$0.6190 500:$0.7830 100:$0.8860 10:$1.1600 1:$1.3400
IPD30N10S3L34ATMA1 DISTI # XSKDRABS0030196	Infineon Technologies AG	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.4745 2500:$0.5084

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Verfügbarkeit

Aktie:: 26
Auf Bestellung:: 2009
Menge eingeben:

Der aktuelle Preis von IPD30N10S3L34ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,87 $~~; ~~0,87 $~~

10: ~~0,75 $~~; ~~7,50 $~~

100: ~~0,58 $~~; ~~57,60 $~~

500: ~~0,51 $~~; ~~254,50 $~~

1000: ~~0,40 $~~; ~~402,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD30N10S3L34ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes