SI4431BDY-T1-GE3

SI4431BDY-T1-GE3
Mfr. #:
SI4431BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 7.5A 2.5W 30mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4431BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4431BDY-T1-GE3 DatasheetSI4431BDY-T1-GE3 Datasheet (P4-P6)SI4431BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI4431BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4431BDY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans Mosfet P-ch 30V 5.7A 8-PIN SOIC N T/r
*** Source Electronics
MOSFET P-CH 30V 5.7A 8SOIC
***
P-CHANNEL 30-V (D-S) MOSFET
***ure Electronics
30V 0.03 Ohm P-ch SOIC-8
***i-Key
MOSFET P-CH 30V 5.7A 8SO
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.5W
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3-ND
Vishay SiliconixMOSFET P-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.4928
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.4249
  • 5000:$0.4119
  • 10000:$0.3949
  • 15000:$0.3839
  • 25000:$0.3739
SI4431BDY-T1-GE3
DISTI # 15R5014
Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.4390
  • 2500:$0.4360
  • 5000:$0.4230
  • 10000:$0.4070
SI4431BDY-T1-GE3
DISTI # 84R8048
Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.9200
  • 10:$0.7580
  • 25:$0.6990
  • 50:$0.6410
  • 100:$0.5820
  • 250:$0.5410
  • 500:$0.5000
SI4431BDY-T1-GE3
DISTI # 781-SI4431BDY-GE3
Vishay IntertechnologiesMOSFET 30V 7.5A 2.5W 30mohm @ 10V
RoHS: Compliant
1970
  • 1:$0.9200
  • 10:$0.7580
  • 100:$0.5820
  • 500:$0.5000
  • 1000:$0.3950
  • 2500:$0.3690
SI4431BDY-T1-GE3
DISTI # 1868999
Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant
0
  • 2500:$1.8400
SI4431BDY-T1-GE3
DISTI # 1868999
Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant
0
  • 2500:£0.8190
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SI4431BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,11 $
1,11 $
10
0,92 $
9,21 $
100
0,71 $
70,70 $
500
0,61 $
304,00 $
1000
0,53 $
532,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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