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| PartNumber | SI4431BDY-T1-E3 | SI4431BDY-T1-E3-CUT TAPE | SI4431BDY-T1-E3 GE3 |
| Description | MOSFET 30V (D-S) 7.5A | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 30 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 18 S | - | - |
| Fall Time | 47 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SI4431BDY-E3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4431BDY-T1-E3 | MOSFET 30V (D-S) 7.5A | |
| SI4431BDY-T1-GE3 | MOSFET 30V 7.5A 2.5W 30mohm @ 10V | ||
| SI4431BDY-T1-E3-CUT TAPE | Neu und Original | ||
| SI4431BDY-T1-E3 GE3 | Neu und Original | ||
| SI4431BDY-T1-E3-S | Neu und Original | ||
| SI4431BDY-T1-E3CT | Neu und Original | ||
Vishay |
SI4431BDY-T1-E3 | MOSFET P-CH 30V 5.7A 8-SOIC | |
| SI4431BDY-T1-GE3 | MOSFET P-CH 30V 5.7A 8SOIC |